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| PartNumber | IPD80R1K4P7ATMA1 | IPD80R1K4CEATMA1 | IPD80R1K4CEBTMA1 |
| Description | MOSFET | MOSFET N-Ch 800V 3.9A DPAK-2 | MOSFET N-Ch 800V 3.9A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
| Id Continuous Drain Current | 4 A | 3.9 A | 3.9 A |
| Rds On Drain Source Resistance | 1.4 Ohms | 1.4 Ohms | 1.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 2.1 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Qg Gate Charge | 10 nC | 23 nC | 23 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 32 W | 63 W | 63 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | CoolMOS P7 | CoolMOS CE | CoolMOS CE |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 20 ns | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 15 ns | 15 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 72 ns | 72 ns |
| Typical Turn On Delay Time | 10 ns | 25 ns | 25 ns |
| Part # Aliases | IPD80R1K4P7 SP001422564 | IPD80R1K4CE SP001130972 | IPD80R1K4CE SP001100604 |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD80R1K4P7ATMA1 | MOSFET | |
| IPD80R1K4CEATMA1 | MOSFET N-Ch 800V 3.9A DPAK-2 | ||
| IPD80R1K4P7ATMA1 | MOSFET N-CH 800V 4A DPAK | ||
| IPD80R1K4CEBTMA1 | MOSFET N-Ch 800V 3.9A DPAK-2 | ||
| IPD80R1K4CEATMA1 | MOSFET N-Ch 800V 3.9A DPAK-2 | ||
Infineon Technologies |
IPD80R1K4CEBTMA1 | MOSFET N-Ch 800V 3.9A DPAK-2 | |
| IPD80R1K4P7ATMA1-CUT TAPE | 全新原装 | ||
| IPD80R1K4CE | Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE) | ||
| IPD80R1K4CEATMA1 , 2SD24 | 全新原装 | ||
| IPD80R1K4CEBTMA1 , 2SD24 | 全新原装 | ||
| IPD80R1K4P7 | 全新原装 |