TGF2040

TGF2040
Mfr. #:
TGF2040
制造商:
Qorvo
描述:
RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
生命周期:
制造商新产品。
数据表:
TGF2040 数据表
交货:
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ECAD Model:
更多信息:
TGF2040 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
系列
转化生长因子
打包
凝胶包
部分别名
1098615
安装方式
贴片/贴片
工作温度范围
- 65 C to + 150 C
技术
砷化镓
配置
单身的
晶体管型
pHEMT
获得
13 dB
钯功耗
1.4 W
最高工作温度
+ 150 C
最低工作温度
- 65 C
工作频率
20 GHz
Id 连续漏极电流
129 mA
Vds-漏-源-击穿电压
8 V
正向跨导最小值
155 mS
VGS-栅极-源极击穿电压
- 15 V
NF-噪声系数
1.1 dB
P1dB-压缩点
26 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
TGF2040/60 Discrete GaAs pHEMTs
Qorvo TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. Qorvo TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.Learn More
型号 制造商 描述 库存 价格
TGF2040
DISTI # 772-TGF2040
QorvoRF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
RoHS: Compliant
300
  • 100:$6.6300
  • 300:$6.1900
  • 500:$5.7900
  • 1000:$5.4100
图片 型号 描述
TGF2934

Mfr.#: TGF2934

OMO.#: OMO-TGF2934

RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF3015-SM

Mfr.#: TGF3015-SM

OMO.#: OMO-TGF3015-SM-318

RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
TGF120-EPU

Mfr.#: TGF120-EPU

OMO.#: OMO-TGF120-EPU-1190

全新原装
TGF1350-SCC

Mfr.#: TGF1350-SCC

OMO.#: OMO-TGF1350-SCC-1152

RF JFET Transistors DC-18.0GHz 0.3mm MESFET
TGF148-1200B

Mfr.#: TGF148-1200B

OMO.#: OMO-TGF148-1200B-1190

全新原装
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
TGF4240-SCC

Mfr.#: TGF4240-SCC

OMO.#: OMO-TGF4240-SCC-1152

RF JFET Transistors DC-12.0GHz 1.4 Watt HFET
TGF4260-SCC

Mfr.#: TGF4260-SCC

OMO.#: OMO-TGF4260-SCC-1152

RF JFET Transistors DC-10.5GHz 5 Watt HFET
TGF3162

Mfr.#: TGF3162

OMO.#: OMO-TGF3162-1190

ARBITRARY FUNCTION GENERATOR, 2CH/160MHZ
可用性
库存:
Available
订购:
2000
输入数量:
TGF2040的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$8.12
US$8.12
10
US$7.71
US$77.09
100
US$7.30
US$730.35
500
US$6.90
US$3 448.90
1000
US$6.49
US$6 492.00
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