BSM120D12P2C005

Mfr. #:: BSM120D12P2C005
制造商:: Rohm Semiconductor
描述:: MOSFET 2N-CH 1200V 120A MODULE
生命周期:: 制造商新产品。
数据表:: BSM120D12P2C005 数据表
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ECAD Model:
更多信息:: BSM120D12P2C005 更多信息

产品属性
属性值

制造商: 罗门半导体

产品分类: FET - 阵列

系列: BSM120D12P2C005

产品: 功率半导体模块

类型: 碳化硅功率模块

打包: 大部分

安装方式: 拧紧

工作温度范围: - 40 C to + 150 C

包装盒: 模块

工作温度: -40°C ~ 150°C (TJ)

安装型: *

供应商-设备-包: 模块

配置: 半桥

FET型: 2 N-Channel (Half Bridge)

最大功率: 780W

漏源电压 Vdss: 1200V (1.2kV)

输入电容-Ciss-Vds: 14000pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 120A

Rds-On-Max-Id-Vgs: -

Vgs-th-Max-Id: 2.7V @ 22mA

栅极电荷-Qg-Vgs: -

Tags: BSM1, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM120D12P2C005 描述

***ark: MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes

***Components: Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005

***et: Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray

***i-Key: MOSFET 2N-CH 1200V 120A MODULE

***ukat: SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-

***ment14 APAC: MODULE, POWER, SIC, 1200V, 120A

***p One Stop Japan: Power Module Automotive 10-Pin Tray

BSM120D12P2C005 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SiC Power Modules: ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Market price

型号	制造商	描述	库存	价格
BSM120D12P2C005 DISTI # BSM120D12P2C005-ND	ROHM Semiconductor	MOSFET 2N-CH 1200V 120A MODULE RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	10:$372.1830 1:$391.0600
BSM120D12P2C005 DISTI # BSM120D12P2C005	ROHM Semiconductor	Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005) RoHS: Compliant Min Qty: 12 Container: Bulk	Americas - 0	12:$387.8900 24:$363.6900 48:$342.3900 72:$323.3900 120:$314.6900
BSM120D12P2C005 DISTI # 755-BSM120D12P2C005	ROHM Semiconductor	Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode) RoHS: Compliant	0	1:$391.0600 5:$381.6300
BSM120D12P2C005 DISTI # 2345472	ROHM Semiconductor	MODULE, POWER, SIC, 1200V, 120A RoHS: Compliant	0	1:£371.0000 5:£307.0000

BSM120D12P2C005

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes