FCP380N60E

Mfr. #:: FCP380N60E
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V TO220-3
生命周期:: 制造商新产品。
数据表:: FCP380N60E 数据表
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更多信息:: FCP380N60E 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: 晶体管 - FET、MOSFET - 单

打包: 管子

单位重量: 0.063493 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

钯功耗: 106 W

Id 连续漏极电流: 10.2 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 380 mOhms

晶体管极性: N通道

Tags: FCP380N60E, FCP38, FCP3, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP380N60E 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220

***p One Stop Global: Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Tube

***Components: MOSFET N-CH 600V 10A SUPERFET-II TO220

***ark: MOSFET, N-CH, 600V, 10.2A, TO-220

***i-Key: MOSFET N-CH 600V TO-220-3

***ment14 APAC: MOSFET, N-CH, 600V, 10.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:106W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCP380N60E 更多信息

SuperFET® II Power MOSFETs: ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More

Industrial Power Solutions: ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More

Market price

型号	制造商	描述	库存	价格
FCP380N60E DISTI # V79:2366_17784644	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail	675	1600:$0.8206 800:$0.9272 100:$1.0163 10:$1.1689 1:$1.2857
FCP380N60E DISTI # FCP380N60E-ND	ON Semiconductor	MOSFET N-CH 600V TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	190In Stock	1600:$1.1643 800:$1.2687 100:$1.8068 10:$2.2480 1:$2.4900
FCP380N60E DISTI # 26114494	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail	675	100:$1.0163 18:$1.1689
FCP380N60E DISTI # FCP380N60E	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP380N60E) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$0.9539 1600:$0.9479 3200:$0.9349 4800:$0.9239 8000:$0.9009
FCP380N60E DISTI # 512-FCP380N60E	ON Semiconductor	MOSFET 600V N-CHAN MOSFET RoHS: Compliant	802	1:$2.1500 10:$1.8300 100:$1.4600 500:$1.2800 1000:$1.0600 2500:$0.9860 5000:$0.9500
FCP380N60E	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	26966	1000:$1.1900 500:$1.2500 100:$1.3100 25:$1.3600 1:$1.4700
FCP380N60E DISTI # C1S541901387479	ON Semiconductor	Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	675	100:$1.0163 10:$1.1689

图片	型号	描述
	Mfr.#: FCP380N60 OMO.#: OMO-FCP380N60	MOSFET SuperFET2, 380mohm
	Mfr.#: FCP380N60E OMO.#: OMO-FCP380N60E	MOSFET 600V N-CHAN MOSFET
	Mfr.#: FCP380N60 OMO.#: OMO-FCP380N60-ON-SEMICONDUCTOR	MOSFET N-CH 600V TO220-3
	Mfr.#: FCP380N60E OMO.#: OMO-FCP380N60E-ON-SEMICONDUCTOR	MOSFET N-CH 600V TO220-3
	Mfr.#: FCP380N60E,FCP380N60 OMO.#: OMO-FCP380N60E-FCP380N60-1190	全新原装
	Mfr.#: FCP380N60E,FCP380N60, OMO.#: OMO-FCP380N60E-FCP380N60--1190	全新原装

FCP380N60E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes