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SI2333DS-T1-GE3

SI2333DS-T1-GE3
Mfr. #:
SI2333DS-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
生命周期:
制造商新产品。
数据表:
SI2333DS-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI2333DS-T1-GE3 DatasheetSI2333DS-T1-GE3 Datasheet (P4-P6)SI2333DS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI2333DS-T1-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SOT-23-3
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
1.45 mm
长度：
2.9 mm
系列：
SI2
宽度：
1.6 mm
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
第 # 部分别名：
SI2333DS-GE3
单位重量：
0.000282 oz
Tags
SI2333DS-T, SI2333DS, SI2333D, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
***i-Key
MOSFET P-CH 12V 4.1A SOT23-3
***
P-CHANNEL 12-V (D-S) MOSFET
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:750mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型号 制造商 描述 库存 价格
SI2333DS-T1-GE3
DISTI # V36:1790_09216809		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.3409
  • 1500000:$0.3410
  • 300000:$0.3506
  • 30000:$0.3652
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.3325
  • 15000:$0.3360
  • 6000:$0.3491
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3199
  • 18000:$0.3289
  • 12000:$0.3379
  • 6000:$0.3529
  • 3000:$0.3629
SI2333DS-T1-GE3
DISTI # 84R8032		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 84R8032)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.4690
  • 500:$0.5950
  • 250:$0.6440
  • 100:$0.6910
  • 50:$0.7960
  • 25:$0.9010
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 15R4914		Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes0
  • 10000:$0.3180
  • 6000:$0.3250
  • 4000:$0.3380
  • 2000:$0.3750
  • 1000:$0.4130
  • 1:$0.4300
SI2333DS-T1-GE3
DISTI # 84R8032		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes1670
  • 1000:$0.4740
  • 500:$0.6010
  • 250:$0.6500
  • 100:$0.6990
  • 50:$0.8040
  • 25:$0.9100
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 781-SI2333DS-GE3		Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant		4820
  • 1:$0.8700
  • 10:$0.7200
  • 100:$0.5520
  • 500:$0.4750
  • 1000:$0.3740
  • 3000:$0.3490
  • 6000:$0.3320
  • 9000:$0.3250
SI2333DS-T1-GE3Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant		Americas -
    SI2333DS-T1-GE3
    DISTI # 1867182    		Vishay IntertechnologiesP CH MOSFET
    RoHS: Compliant    		1260
    • 250:£0.5890
    • 100:£0.6330
    • 50:£0.7280
    • 25:£0.8250
    • 1:£0.9960
    SI2333DS-T1-GE3
    DISTI # 1867182    		Vishay IntertechnologiesP CHANNEL MOSFET
    RoHS: Compliant    		1670
    • 3000:$0.5540
    • 1000:$0.5650
    • 500:$0.7170
    • 100:$0.8330
    • 10:$1.0900
    • 1:$1.3100
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    可用性
    库存:
    Available
    订购:
    1987
    输入数量:
    SI2333DS-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.87
    US$0.87
    10
    US$0.72
    US$7.20
    100
    US$0.55
    US$55.20
    500
    US$0.48
    US$237.50
    1000
    US$0.37
    US$374.00
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