SI2333DS

SI2333DS-T1-E3 vs SI2333DS vs SI2333DS-T1

 
PartNumberSI2333DS-T1-E3SI2333DSSI2333DS-T1
DescriptionMOSFET 12V 5.3A 1.25W 32 mohms @ 4.5VMOSFET Transistor, P-Channel, TO-236MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current5.3 A--
Rds On Drain Source Resistance32 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min17 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesSI2333DS-T1--
Unit Weight0.000282 oz--
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2333DS-T1-GE3 MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
SI2333DS-T1-E3 MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V
SI2333DS MOSFET Transistor, P-Channel, TO-236
SI2333DS-T1 MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
SI2333DS-T1-E3-CUT TAPE 全新原装
Vishay
Vishay
SI2333DS-T1-E3 MOSFET P-CH 12V 4.1A SOT23-3
SI2333DS-T1-GE3 MOSFET P-CH 12V 4.1A SOT23-3
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