DMG1016V-7

Mfr. #:: DMG1016V-7
制造商:: Diodes Incorporated
描述:: MOSFET N/P-CH 20V SOT563
生命周期:: 制造商新产品。
数据表:: DMG1016V-7 数据表
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更多信息:: DMG1016V-7 更多信息

产品属性
属性值

制造商: 二极管公司

产品分类: FET - 阵列

系列: DMG1016

打包: Digi-ReelR 替代包装

单位重量: 0.000106 oz

安装方式: 贴片/贴片

包装盒: SOT-563, SOT-666

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: SOT-563

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 530mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 60.67pF @ 16V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 870mA, 640mA

Rds-On-Max-Id-Vgs: 400 mOhm @ 600mA, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 0.74nC @ 4.5V

钯功耗: 530 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12.3 ns 20.7 ns

上升时间: 7.4 nS 8.1 nS

VGS-栅极-源极-电压: 6 V

Id 连续漏极电流: 870 mA 640 mA

Vds-漏-源-击穿电压: 20 V 20 V

Rds-On-Drain-Source-Resistance: 700 mOhms 1.3 Ohms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 26.7 nS 28.4 nS

典型开启延迟时间: 5.1 ns 5.1 ns

Qg-门电荷: 736.6 pC 622.4 pC

正向跨导最小值: 1.4 S - 0.9 S

Tags: DMG1016V-7, DMG1016V, DMG1016, DMG101, DMG1, DMG

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMG1016V-7 更多信息

DMx Enhancement Mode MOSFETs: Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.

Market price

型号	制造商	描述	库存	价格
DMG1016V-7 DISTI # DMG1016V-7DICT-ND	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	107490In Stock	1000:$0.1360 500:$0.1734 100:$0.2855 10:$0.4290 1:$0.6000
DMG1016V-7 DISTI # DMG1016V-7DIDKR-ND	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	107490In Stock	1000:$0.1360 500:$0.1734 100:$0.2855 10:$0.4290 1:$0.6000
DMG1016V-7 DISTI # DMG1016V-7DITR-ND	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	102000In Stock	3000:$0.1199
DMG1016V-7 DISTI # DMG1016V-7	Diodes Incorporated	Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R - Tape and Reel (Alt: DMG1016V-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0669 6000:$0.0639 12000:$0.0609 18000:$0.0579 30000:$0.0569
DMG1016V-7 DISTI # DMG1016V-7	Diodes Incorporated	Trans MOSFET N/P-CH 20V 0.87A/0.64A 6-Pin SOT-563 T/R (Alt: DMG1016V-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0759 6000:€0.0739 12000:€0.0729 18000:€0.0729 30000:€0.0729
DMG1016V-7 DISTI # 82Y6559	Diodes Incorporated	MOSFET, N & P CH, 20V/-20V, SOT-563,Transistor Polarity:N and P Complement,Continuous Drain Current Id:870mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,, RoHS Compliant: Yes	2925	1:$0.4500 10:$0.3120 25:$0.2560 50:$0.2000 100:$0.1440 250:$0.1330 500:$0.1210 1000:$0.1100
DMG1016V-7 DISTI # 70438034	Diodes Incorporated	MOSFET N/P-Ch 20V 0.87A/0.64A SOT563 RoHS: Compliant	0	250:$0.1700 500:$0.1500 1500:$0.1400 3000:$0.1300
DMG1016V-7	Diodes Incorporated	N & P Channel 400 mO 20 Vds Complementary Pair Enhancement Mode Mosfet - SOT-563 RoHS: Compliant	108000Reel	3000:$0.0772 9000:$0.0753
DMG1016V-7 DISTI # 621-DMG1016V-7	Diodes Incorporated	MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563 RoHS: Compliant	11438	1:$0.4500 10:$0.3120 100:$0.1440 1000:$0.1100 3000:$0.0940 9000:$0.0860
DMG1016V-7 DISTI # 7514082P	Zetex / Diodes Inc	MOSFET N/P-CH 20V 0.87A/0.64A SOT563, RL	11550	600:£0.1240 1500:£0.0960
DMG1016V-7 DISTI # 2543558	Diodes Incorporated	MOSFET, N & P CH, 20V/-20V, SOT-563 RoHS: Compliant	2925	5:£0.2800 25:£0.2270 100:£0.1180 250:£0.1130 500:£0.0936
DMG1016V-7 DISTI # XSFP00000001325	Diodes Incorporated	SmallSignalField-EffectTransistor,1.03AI(D),20V,2-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	314964	3000:$0.2440 314964:$0.2218
DMG1016V-7 DISTI # 2543558	Diodes Incorporated	MOSFET, N & P CH, 20V/-20V, SOT-563 RoHS: Compliant	2925	1:$0.7120 10:$0.4940 100:$0.2280 1000:$0.1750 3000:$0.1500 9000:$0.1370

图片	型号	描述
	Mfr.#: DMG1029SVQ-7 OMO.#: OMO-DMG1029SVQ-7	MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K
	Mfr.#: DMG1029SV-7 OMO.#: OMO-DMG1029SV-7	MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
	Mfr.#: DMG1024UV-7 OMO.#: OMO-DMG1024UV-7	MOSFET MOSFET N-CHANNEL
	Mfr.#: DMG1016VQ-13 OMO.#: OMO-DMG1016VQ-13	MOSFET Comp Pair Enh FET 20Vdss 6Vgss
	Mfr.#: DMG1012T OMO.#: OMO-DMG1012T-1190	全新原装
	Mfr.#: DMG1013UW-7-F OMO.#: OMO-DMG1013UW-7-F-1190	全新原装
	Mfr.#: DMG1023UV7 OMO.#: OMO-DMG1023UV7-1190	全新原装
	Mfr.#: DMG1024UV OMO.#: OMO-DMG1024UV-1190	全新原装
	Mfr.#: DMG1016UDW-7-CUT TAPE OMO.#: OMO-DMG1016UDW-7-CUT-TAPE-1190	全新原装
	Mfr.#: DMG1012TQ-7 OMO.#: OMO-DMG1012TQ-7-DIODES	Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R

DMG1016V-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes