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TGF2023-2-05

TGF2023-2-05
Mfr. #:
TGF2023-2-05
制造商:
Qorvo
描述:
RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
生命周期:
制造商新产品。
数据表:
TGF2023-2-05 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2023-2-05 更多信息
产品属性
属性值
制造商：
科沃
产品分类：
射频 JFET 晶体管
RoHS：
Y
技术：
氮化镓
获得：
16.2 dB
Vds - 漏源击穿电压：
-
Vgs - 栅源击穿电压：
-
Id - 连续漏极电流：
-
输出功率：
90 W
最大漏栅电压：
-
最低工作温度：
- 40 C
最高工作温度：
-
Pd - 功耗：
-
安装方式：
贴片/贴片
包装/案例：
DFN-6
打包：
卷轴
应用：
微蜂窝基站，W-CDMA / LTE
配置：
单身的
工作频率：
1.8 GHz to 3.8 GHz
系列：
QPD
品牌：
科沃
正向跨导 - 最小值：
-
开发套件：
QPD0060PCB4B01
产品类别：
射频 JFET 晶体管
出厂包装数量：
250
子类别：
晶体管
第 # 部分别名：
1131037
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 25 W, 11.9 dB, 28 V, GaN, 0.82 X 1.44 X 0.10 mm
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
型号 制造商 描述 库存 价格
TGF2023-2-05
DISTI # 772-TGF2023-2-05		QorvoRF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
RoHS: Compliant		0
  • 50:$59.9400
  • 100:$51.8400
1099947
DISTI # TGF2023-2-05		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$39.4700
图片 型号 描述
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

 RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20

 RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2022-12

Mfr.#: TGF2022-12

OMO.#: OMO-TGF2022-12-318

 RF JFET Transistors DC-20GHz 1.2mm Pwr pHEMT (0.35um)
TGF2022-24

Mfr.#: TGF2022-24

OMO.#: OMO-TGF2022-24-318

 RF JFET Transistors DC-20GHz 2.4mm Pwr pHEMT (0.35um)
TGF2023-2-10

Mfr.#: TGF2023-2-10

OMO.#: OMO-TGF2023-2-10-318

 RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

 RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2022-60

Mfr.#: TGF2022-60

OMO.#: OMO-TGF2022-60-318

 RF JFET Transistors DC-20GHz 6.0mm Pwr pHEMT (0.35um)
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

 RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2023-01

Mfr.#: TGF2023-01

OMO.#: OMO-TGF2023-01-1152

 RF JFET Transistors 1.25mm GaN Discrete
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

 RF JFET Transistors 10mm GaN Discrete
可用性
库存:
Available
订购:
1500
输入数量:
TGF2023-2-05的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
50
US$59.94
US$2 997.00
100
US$51.84
US$5 184.00
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