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TGF2023-2-02

TGF2023-2-02
Mfr. #:
TGF2023-2-02
制造商:
Qorvo
描述:
RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
生命周期:
制造商新产品。
数据表:
TGF2023-2-02 数据表
交货:
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支付:
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ECAD Model:
更多信息:
TGF2023-2-02 更多信息
产品属性
属性值
制造商：
科沃
产品分类：
射频 JFET 晶体管
RoHS：
Y
晶体管类型：
HEMT
技术：
氮化镓碳化硅
晶体管极性：
N通道
包装/案例：
死
打包：
凝胶包
产品：
射频结型场效应管
系列：
转化生长因子
类型：
氮化镓碳化硅 HEMT
品牌：
科沃
产品类别：
射频 JFET 晶体管
出厂包装数量：
100
子类别：
晶体管
第 # 部分别名：
1099622
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 12 W, 12.3 dB, 28 V, GaN, 0.82 X 0.92 X 0.10 mm
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
型号 制造商 描述 库存 价格
TGF2023-2-02
DISTI # 772-TGF2023-2-02		QorvoRF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
RoHS: Compliant		0
  • 100:$37.9700
图片 型号 描述
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

 RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20

 RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2021-12

Mfr.#: TGF2021-12

OMO.#: OMO-TGF2021-12-318

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TGF2022-06

Mfr.#: TGF2022-06

OMO.#: OMO-TGF2022-06-318

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TGF2021-04

Mfr.#: TGF2021-04

OMO.#: OMO-TGF2021-04-318

 RF JFET Transistors DC-12GHz 4mm Pwr pHEMT (0.35um)
TGF2023-2-10

Mfr.#: TGF2023-2-10

OMO.#: OMO-TGF2023-2-10-318

 RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

 RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

 RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

 RF JFET Transistors 10mm GaN Discrete
TGF2023-2-0150PCS

Mfr.#: TGF2023-2-0150PCS

OMO.#: OMO-TGF2023-2-0150PCS-1190

 全新原装
可用性
库存:
300
订购:
2283
输入数量:
TGF2023-2-02的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
100
US$37.97
US$3 797.00
300
US$35.69
US$10 707.00
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