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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SEM2105 | Samsung Semiconductor | 13219 |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SEMS-DC09WM OMO.#: OMO-SEMS-DC09WM-1190 |
全新原装 |
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Mfr.#: SEM140 OMO.#: OMO-SEM140-1190 |
全新原装 |
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Mfr.#: SEM3310 OMO.#: OMO-SEM3310-1190 |
全新原装 |
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Mfr.#: SEM5026 OMO.#: OMO-SEM5026-1190 |
全新原装 |
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Mfr.#: SEM9926 OMO.#: OMO-SEM9926-1190 |
全新原装 |
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Mfr.#: SEMIX151GB12T4S OMO.#: OMO-SEMIX151GB12T4S-1190 |
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: SEMIX201GD128DS OMO.#: OMO-SEMIX201GD128DS-1190 |
全新原装 |
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Mfr.#: SEMIX202GB128DS OMO.#: OMO-SEMIX202GB128DS-1190 |
全新原装 |
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Mfr.#: SEMIX653GB176HDS OMO.#: OMO-SEMIX653GB176HDS-1190 |
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V, |
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Mfr.#: SEMQN061 OMO.#: OMO-SEMQN061-1190 |
全新原装 |