FF200R12MT4

Mfr. #:: FF200R12MT4
制造商:: Rochester Electronics, LLC
描述:: IGBT Modules IGBT-MODULE
生命周期:: 制造商新产品。
数据表:: FF200R12MT4 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: 模块

产品: IGBT 硅模块

打包: 盒子

安装方式: 拧紧

包装盒: 经济型

配置: 双重的

钯功耗: 1050 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.15 V

25-C 时的连续集电极电流: 295 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: +/- 20 V

Tags: FF200R12, FF200R1, FF200R, FF200, FF20, FF2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF200R12MT4 描述

***et Europe: Trans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2

***i-Key: IGBT MODULE VCES 1200V 200A

***omponent: Infineon power module

***et: MEDIUM POWER ECONO

***ineon: EconoDUAL 2 1200V dual IGBT module with fast trench/fieldstop IGBT4, Emitter Controlled 4 diode and NTC | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; induction-heating; welding

Market price

型号	制造商	描述	库存	价格
FF200R12MT4BOMA1 DISTI # FF200R12MT4BOMA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 14 Container: Bulk	Limited Supply - Call
FF200R12MT4 DISTI # FF200R12MT4	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 295A 10-pin ECONOD-2 - Bulk (Alt: FF200R12MT4) RoHS: Not Compliant Min Qty: 4 Container: Bulk	Americas - 0	4:$54.2900 6:$52.2900 10:$50.3900 20:$48.6900 40:$47.7900
FF200R12MT4BOMA1 DISTI # FF200R12MT4BOMA1	Infineon Technologies AG	MEDIUM POWER ECONO - Bulk (Alt: FF200R12MT4BOMA1) Min Qty: 4 Container: Bulk	Americas - 0
FF200R12MT4 DISTI # 641-FF200R12MT4	Infineon Technologies AG	IGBT Modules IGBT-MODULE RoHS: Compliant	0
FF200R12MT4	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	147	1000:$95.2900 500:$100.3100 100:$104.4300 25:$108.9000 1:$117.2800
FF200R12MT4BOMA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	540	1000:$87.3600 500:$91.9500 100:$95.7300 25:$99.8400 1:$107.5100

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