SIHD7N60ET-GE3

SIHD7N60ET-GE3
Mfr. #:
SIHD7N60ET-GE3
制造商:
Vishay / Siliconix
描述:
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
生命周期:
制造商新产品。
数据表:
SIHD7N60ET-GE3 数据表
交货:
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ECAD Model:
更多信息:
SIHD7N60ET-GE3 更多信息
产品属性
属性值
制造商
威世 / Siliconix
产品分类
晶体管 - FET、MOSFET - 单
系列
E
打包
卷轴
单位重量
0.050717 oz
安装方式
贴片/贴片
商品名
E系列
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
78 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
4 V
Id 连续漏极电流
7 A
Vds-漏-源-击穿电压
600 V
Rds-On-Drain-Source-Resistance
600 mOhms
晶体管极性
N通道
Qg-门电荷
20 nC
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHD7N60ET-GE3
DISTI # 78-SIHD7N60ET-GE3
Vishay IntertechnologiesMOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
RoHS: Compliant
0
  • 2000:$0.8750
  • 4000:$0.8430
图片 型号 描述
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3-CUT TAPE

Mfr.#: SIHD7N60E-GE3-CUT TAPE

OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190

全新原装
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

MOSFET N-CH 600V 7A TO-252
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY

MOSFET N-CH 600V 7A TO252AA
可用性
库存:
Available
订购:
4500
输入数量:
SIHD7N60ET-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.26
US$1.26
10
US$1.20
US$12.01
100
US$1.14
US$113.81
500
US$1.07
US$537.40
1000
US$1.01
US$1 011.60
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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