STD11NM60N-1

STD11NM60N-1
Mfr. #:
STD11NM60N-1
制造商:
STMicroelectronics
描述:
MOSFET N-CH 600V 10A I-PAK
生命周期:
制造商新产品。
数据表:
STD11NM60N-1 数据表
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ECAD Model:
更多信息:
STD11NM60N-1 更多信息 STD11NM60N-1 Product Details
产品属性
属性值
Tags
STD11NM60, STD11NM6, STD11NM, STD11N, STD11, STD1, STD
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Power MOSFET Transistors N Ch 600V 0.37 Ohm 10A
***i-Key
MOSFET N-CH 600V 10A I-PAK
***ark
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:10A; Resistance, Rds On:0.45ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:10A; Resistance, Rds On:0.45ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:I-PAK; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:200mJ; Current Iar:3.5A; Current, Idm Pulse:40A; Power, Pd:100W; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.25°C/W; Typ Capacitance Ciss:850pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:25V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
型号 制造商 描述 库存 价格
STD11NM60N-1
DISTI # 497-5963-5-ND
STMicroelectronicsMOSFET N-CH 600V 10A I-PAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
    STD11NM60N-1
    DISTI # 511-STD11NM60N-1
    STMicroelectronicsMOSFET N Ch 600V 0.37 Ohm 10A
    RoHS: Compliant
    0
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      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
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