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IPB020N08N5ATMA1

IPB020N08N5ATMA1
Mfr. #:
IPB020N08N5ATMA1
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
生命周期:
制造商新产品。
数据表:
IPB020N08N5ATMA1 数据表
交货:
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ECAD Model:
更多信息:
IPB020N08N5ATMA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
IPB020N08N5 SP001227042
单位重量
0.139332 oz
安装方式
贴片/贴片
包装盒
TO-263-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
300 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
20 ns
上升时间
16 ns
VGS-栅极-源极-电压
+/- 20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
80 V
VGS-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
2.5 mOhms
晶体管极性
N通道
典型关断延迟时间
62 ns
典型开启延迟时间
28 ns
Qg-门电荷
133 nC
正向跨导最小值
100 S
通道模式
增强
Tags
IPB020N08, IPB020N0, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0017Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
型号 制造商 描述 库存 价格
IPB020N08N5ATMA1
DISTI # V72:2272_06378521		Infineon Technologies AGTrans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		215
  • 100:$2.9680
  • 25:$3.0710
  • 10:$3.4120
  • 1:$4.4121
IPB020N08N5ATMA1
DISTI # V36:1790_06378521		Infineon Technologies AGTrans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 140A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3810In Stock
    • 500:$2.8748
    • 100:$3.3770
    • 10:$4.1220
    • 1:$4.5900
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 140A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3810In Stock
    • 500:$2.8748
    • 100:$3.3770
    • 10:$4.1220
    • 1:$4.5900
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 140A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		3000In Stock
    • 2000:$2.2362
    • 1000:$2.3539
    IPB020N08N5ATMA1
    DISTI # 31924432    		Infineon Technologies AGTrans MOSFET N-CH 80V 173A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		215
    • 100:$2.9680
    • 25:$3.0710
    • 10:$3.4120
    • 4:$4.0110
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB020N08N5ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 20000
    • 6000:$1.8900
    • 10000:$1.8900
    • 4000:$1.9900
    • 2000:$2.0900
    • 1000:$2.1900
    IPB020N08N5ATMA1
    DISTI # SP001227042    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP001227042)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€1.5900
    • 6000:€1.6900
    • 2000:€1.8900
    • 4000:€1.8900
    • 1000:€1.9900
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: IPB020N08N5)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 0
    • 50000:$1.9348
    • 25000:$1.9596
    • 10000:$1.9851
    • 5000:$2.0112
    • 3000:$2.0655
    • 2000:$2.1229
    • 1000:$2.1836
    IPB020N08N5ATMA1
    DISTI # 13AC9023    		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes80
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0100
    • 50:$3.1600
    • 25:$3.3100
    • 10:$3.4600
    • 1:$4.0800
    IPB020N08N5ATMA1
    DISTI # 726-IPB020N08N5ATMA1    		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
    RoHS: Compliant    		8496
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9800
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1400
    • 2000:$2.0300
    IPB020N08N5ATMA1Infineon Technologies AGSingle N-Channel 80 V 2 mOhm 156 nC OptiMOS Power Mosfet - D2PAK-3
    RoHS: Not Compliant    		50Cut Tape/Mini-Reel
    • 1:$2.7600
    • 50:$2.3500
    • 100:$2.2900
    • 250:$2.2100
    • 500:$2.1400
    IPB020N08N5ATMA1
    DISTI # IPB020N08N5ATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,80V,120A,300W,PG-TO263-7209
    • 1:$3.1582
    • 5:$2.7860
    • 25:$2.5040
    • 250:$2.4251
    • 1000:$2.2559
    IPB020N08N5ATMA1
    DISTI # 2725836    		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263
    RoHS: Compliant    		80
    • 500:$4.3600
    • 100:$5.3900
    • 10:$6.5600
    • 1:$7.3500
    IPB020N08N5ATMA1
    DISTI # 2725836    		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263569
    • 500:£2.0100
    • 250:£2.2300
    • 100:£2.3700
    • 10:£2.7200
    • 1:£3.5900
    图片 型号 描述
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1

    		 MOSFET N-Ch 80V 120A D2PAK-2
    IPB020N04N G

    Mfr.#: IPB020N04N G

    OMO.#: OMO-IPB020N04N-G

    		 MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
    IPB020N04NGATMA1

    Mfr.#: IPB020N04NGATMA1

    OMO.#: OMO-IPB020N04NGATMA1

    		 MOSFET MV POWER MOS
    IPB020N08N5ATMA1-CUT TAPE

    Mfr.#: IPB020N08N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

    		 全新原装
    IPB020N04N

    Mfr.#: IPB020N04N

    OMO.#: OMO-IPB020N04N-1190

    		 全新原装
    IPB020N04N3G

    Mfr.#: IPB020N04N3G

    OMO.#: OMO-IPB020N04N3G-1190

    		 全新原装
    IPB020N04NG

    Mfr.#: IPB020N04NG

    OMO.#: OMO-IPB020N04NG-1190

    		 全新原装
    IPB020N04NGATMA1

    Mfr.#: IPB020N04NGATMA1

    OMO.#: OMO-IPB020N04NGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 40V 140A TO263-7
    IPB020N04N G

    Mfr.#: IPB020N04N G

    OMO.#: OMO-IPB020N04N-G-124

    		 Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
    可用性
    库存:
    Available
    订购:
    3000
    输入数量:
    IPB020N08N5ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.67
    US$2.67
    10
    US$2.54
    US$25.38
    100
    US$2.40
    US$240.44
    500
    US$2.27
    US$1 135.40
    1000
    US$2.14
    US$2 137.20
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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