IRG8P60N120KDPBF

Mfr. #:: IRG8P60N120KDPBF
制造商:: Infineon Technologies
描述:: IGBT Transistors 1200V IGBT GEN8
生命周期:: 制造商新产品。
数据表:: IRG8P60N120KDPBF 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: IGBT - 单

系列: -

打包: 管子

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247AC

配置: 单身的

最大功率: 420W

反向恢复时间trr: 210ns

电流收集器 Ic-Max: 100A

电压收集器发射极击穿最大值: 1200V

IGBT型: -

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 40A

开关能源: 2.8mJ (on), 2.3mJ (off)

栅极电荷: 345nC

Td-on-off-25°C: 40ns/240ns

测试条件: 600V, 40A, 5 Ohm, 15V

钯功耗: 420 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 1.7 V

25-C 时的连续集电极电流: 100 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: 30 V

连续集电极电流 Ic-Max: 60 A

Tags: IRG8P6, IRG8P, IRG8, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG8P60N120KDPBF 描述

***ical: Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) TO-247AC Tube

***et Europe: Trans IGBT Chip N-CH 1.2KV 100A 3-Pin TO-247AC Tube

***i-Key: IGBT 1200V 60A TO-247AC

***Components: IGBT IRG8P60N120KDPBF

***ark: TUBE / G8, 1200V, 60A, COPAK-247AC

***et: G8, 1200V, 60A, COPAK-247AC

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 100A, TO-247AC-3; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:420W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, SINGOLO, 1.2KV, 100A, TO-247AC-3; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.7V; Dissipazione di Potenza Pd:420W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 2 - 1 anno; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

型号	制造商	描述	库存	价格
IRG8P60N120KDPBF DISTI # V99:2348_13892888	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube	55	100:$7.1140 25:$8.2500 10:$9.1430 1:$10.2360
IRG8P60N120KDPBF DISTI # IRG8P60N120KDPBF-ND	Infineon Technologies AG	IGBT 1200V 100A 420W TO-247AC RoHS: Compliant Min Qty: 50 Container: Tube	Limited Supply - Call
IRG8P60N120KDPBF DISTI # 26198457	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AC Tube	55	25:$8.2500 10:$9.1430 2:$10.2360
IRG8P60N120KDPBF DISTI # 91Y4785	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 100A, TO-247AC-3,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:420W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247AC,No. of , RoHS Compliant: Yes	192	1:$9.9300 10:$8.9500 25:$8.1400 50:$7.5800 100:$7.0700 250:$5.9400 500:$5.7500
IRG8P60N120KDPBF DISTI # 942-IRG8P60N120KDPBF	Infineon Technologies AG	IGBT Transistors 1200V IGBT GEN8 RoHS: Compliant	0
IRG8P60N120KDPBF	International Rectifier	RoHS: Not Compliant	75	1000:$7.2800 500:$7.6600 100:$7.9800 25:$8.3200 1:$8.9600
IRG8P60N120KDPBF DISTI # 2580047	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 100A, TO-247AC-3 RoHS: Compliant	192	1:$14.4600 10:$13.5200 25:$11.9600
IRG8P60N120KDPBF DISTI # 2580047	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 100A, TO-247AC-3 RoHS: Compliant	192	1:£10.4700 5:£9.3600 10:£8.0800 50:£7.5100 100:£7.0000
IRG8P60N120KDPBF DISTI # C1S322000499674	Infineon Technologies AG	IGBT Chip	55	25:$8.2500 10:$9.1430 1:$10.2360

图片	型号	描述
	Mfr.#: IRG8P60N120KDPBF OMO.#: OMO-IRG8P60N120KDPBF	IGBT Transistors 1200V IGBT GEN8
	Mfr.#: IRG8P60N120KDEPBF OMO.#: OMO-IRG8P60N120KDEPBF-1190	全新原装
	Mfr.#: IRG8P60N120KD-EPBF OMO.#: OMO-IRG8P60N120KD-EPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V IGBT GEN8
	Mfr.#: IRG8P60N120KDPBF OMO.#: OMO-IRG8P60N120KDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V IGBT GEN8
	Mfr.#: IRG8P60N120KD OMO.#: OMO-IRG8P60N120KD-1190	全新原装

IRG8P60N120KDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes