 |  | | |
| PartNumber | IRG8P60N120KDEPBF | IRG8P60N120KD-EPBF | IRG8P60N120KD |
| Description | IGBT Transistors 1200V IGBT GEN8 | ||
| Manufacturer | - | Infineon Technologies | Infineon Technologies |
| Product Category | - | IGBTs - Single | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 0.229281 oz | 0.229281 oz |
| Mounting Style | - | Through Hole | Through Hole |
| Package Case | - | TO-247-3 | TO-247-3 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-247AD | TO-247AD |
| Configuration | - | Single | Single |
| Power Max | - | 420W | 420W |
| Reverse Recovery Time trr | - | 210ns | 210ns |
| Current Collector Ic Max | - | 100A | 100A |
| Voltage Collector Emitter Breakdown Max | - | 1200V | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 120A | 120A |
| Vce on Max Vge Ic | - | 2V @ 15V, 40A | 2V @ 15V, 40A |
| Switching Energy | - | 2.8mJ (on), 2.3mJ (off) | 2.8mJ (on), 2.3mJ (off) |
| Gate Charge | - | 345nC | 345nC |
| Td on off 25°C | - | 40ns/240ns | 40ns/240ns |
| Test Condition | - | 600V, 40A, 5 Ohm, 15V | 600V, 40A, 5 Ohm, 15V |
| Pd Power Dissipation | - | 420 W | 420 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Collector Emitter Voltage VCEO Max | - | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | - | 1.7 V | 1.7 V |
| Continuous Collector Current at 25 C | - | 100 A | 100 A |
| Gate Emitter Leakage Current | - | 400 nA | 400 nA |
| Maximum Gate Emitter Voltage | - | 30 V | 30 V |
| Continuous Collector Current Ic Max | - | 60 A | 60 A |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRG8P60N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | |
| IRG8P60N120KDEPBF | 全新原装 | ||
| IRG8P60N120KD | 全新原装 | ||
Infineon Technologies |
IRG8P60N120KD-EPBF | IGBT Transistors 1200V IGBT GEN8 | |
| IRG8P60N120KDPBF | IGBT Transistors 1200V IGBT GEN8 |