STGWA25M120DF3

STGWA25M120DF3
Mfr. #:
STGWA25M120DF3
制造商:
STMicroelectronics
描述:
IGBT Transistors IGBT & Power Bipola
生命周期:
制造商新产品。
数据表:
STGWA25M120DF3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGWA25M120DF3 更多信息 STGWA25M120DF3 Product Details
产品属性
属性值
制造商
意法半导体
产品分类
IGBT - 单
系列
900-1300V IGBTs
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247 Long Leads
配置
单身的
最大功率
375W
反向恢复时间trr
265ns
电流收集器 Ic-Max
50A
电压收集器发射极击穿最大值
1200V
IGBT型
海沟场停止
电流收集器脉冲Icm
100A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 25A
开关能源
850μJ (on), 1.3mJ (off)
栅极电荷
85nC
Td-on-off-25°C
28ns/150ns
测试条件
600V, 25A, 15 Ohm, 15V
钯功耗
375 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
1.2 kV
集电极-发射极-饱和-电压
1.85 V
25-C 时的连续集电极电流
50 A
栅极-发射极-漏电流
250 nA
最大栅极发射极电压
20 V
连续集电极电流 Ic-Max
25 A
Tags
STGWA25, STGWA2, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ment14 APAC
IGBT, SINGLE, 1.2KV, 50A, TO-247-3
***ronik
IGBT 1200V 25A 1,85V TO-247 LL
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
型号 制造商 描述 库存 价格
STGWA25M120DF3
DISTI # 30584118
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
20
  • 5:$6.0690
STGWA25M120DF3
DISTI # 497-15136-5-ND
STMicroelectronicsIGBT 1200V 50A 375W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 510:$7.2700
  • 120:$8.2360
  • 30:$9.3700
  • 1:$10.7600
STGWA25M120DF3
DISTI # C1S730200997351
STMicroelectronicsIGBT Chip20
  • 1:$4.8100
STGWA25M120DF3
DISTI # STGWA25M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGWA25M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€10.0500
  • 5:€8.8700
  • 10:€7.3800
  • 50:€7.0500
  • 100:€5.8500
  • 250:€4.4700
STGWA25M120DF3
DISTI # STGWA25M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA25M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$5.8900
  • 1200:$5.6900
  • 2400:$5.3900
  • 3600:$5.1900
  • 6000:$5.0900
STGWA25M120DF3
DISTI # 42Y1008
STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:375W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes265
  • 1:$6.2000
STGWA25M120DF3
DISTI # 511-STGWA25M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
RoHS: Compliant
0
  • 1:$9.5100
  • 10:$8.6000
  • 25:$8.2000
  • 100:$7.1200
  • 250:$6.8000
  • 500:$6.2000
  • 1000:$5.4000
STGWA25M120DF3STMicroelectronics 597
    STGWA25M120DF3
    DISTI # IGBT2439
    STMicroelectronicsIGBT 1200V 25A 1,85VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$5.9400
    STGWA25M120DF3STMicroelectronics 708
      STGWA25M120DF3
      DISTI # 2470027
      STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
      RoHS: Compliant
      265
      • 500:$11.2700
      • 100:$12.5500
      • 10:$14.1500
      • 1:$16.2400
      STGWA25M120DF3
      DISTI # 2470027
      STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
      RoHS: Compliant
      265
      • 10:£5.0600
      • 5:£5.1600
      • 1:£5.2700
      图片 型号 描述
      STGWA25H120DF2

      Mfr.#: STGWA25H120DF2

      OMO.#: OMO-STGWA25H120DF2

      IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
      STGWA25H120F2

      Mfr.#: STGWA25H120F2

      OMO.#: OMO-STGWA25H120F2

      IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
      STGWA25S120DF3

      Mfr.#: STGWA25S120DF3

      OMO.#: OMO-STGWA25S120DF3

      IGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
      STGWA25M120DF3

      Mfr.#: STGWA25M120DF3

      OMO.#: OMO-STGWA25M120DF3

      IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
      STGWA25M120DF3

      Mfr.#: STGWA25M120DF3

      OMO.#: OMO-STGWA25M120DF3-STMICROELECTRONICS

      IGBT Transistors IGBT & Power Bipola
      STGWA25H120DF2

      Mfr.#: STGWA25H120DF2

      OMO.#: OMO-STGWA25H120DF2-STMICROELECTRONICS

      IGBT HB 1200V 25A HS TO247-3
      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      STGWA25M120DF3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$7.64
      US$7.64
      10
      US$7.25
      US$72.53
      100
      US$6.87
      US$687.15
      500
      US$6.49
      US$3 244.90
      1000
      US$6.11
      US$6 108.00
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