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STP38N65M5

STP38N65M5
Mfr. #:
STP38N65M5
制造商:
STMicroelectronics
描述:
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
生命周期:
制造商新产品。
数据表:
STP38N65M5 数据表
交货:
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ECAD Model:
更多信息:
STP38N65M5 更多信息 STP38N65M5 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
30 A
Rds On - 漏源电阻：
95 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
25 V
Qg - 门电荷：
71 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
190 W
配置：
单身的
频道模式：
增强
商品名：
网状网
打包：
管子
系列：
STP38N65M5
品牌：
意法半导体
秋季时间：
9 ns
产品类别：
MOSFET
上升时间：
9 ns
出厂包装数量：
1000
子类别：
MOSFET
单位重量：
0.011640 oz
Tags
STP38N, STP38, STP3, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
***ure Electronics
N-Channel 650 V 95 mOhm Flange Mount MDmesh™ V Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
***r Electronics
Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
***ark
Power Mosfet, N Channel, 35 A, 650 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CH, 650V, 35A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***r Electronics
Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 600 V 190 W 62 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 33A I(D), 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 550V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220
***ure Electronics
STP42N65M5 Series N-Channel 650 V 79 mOhm MDmesh™ V Power MosFet - TO-220
***ical
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH POWER MOSFET, MDmesh, 710V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
*** Electronic Components
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS
*** Stop Electro
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
***el Electronic
Ceramic Capacitors 82pF 0603 (1608 Metric) ±1% C0G NP0 Tape & Reel (TR) 1 (Unlimited) General Purpose Surface Mount, MLCC -55°C~125°C Cap Ceramic 82pF 50V C0G 1% SMD 0603 125°C Paper T/R
***ark
MOSFET, N-CH, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ical
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220
***ark
MOSFET, N-CH, 650V, 24A, 150DEG C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO220-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 
STM MDmeshV Power MOSFETs - Thru-Hole
型号 制造商 描述 库存 价格
STP38N65M5
DISTI # 30993128		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 3:$8.8000
STP38N65M5
DISTI # 497-13112-5-ND		STMicroelectronicsMOSFET N-CH 650V 30A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$4.5190
STP38N65M5
DISTI # C1S730200703813		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 1000:$4.7200
  • 500:$5.0500
  • 100:$5.7100
  • 50:$5.7700
  • 10:$6.3400
  • 1:$7.0400
STP38N65M5
DISTI # V36:1790_06564716		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000:$3.7140
STP38N65M5
DISTI # STP38N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube (Alt: STP38N65M5)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 300
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
STP38N65M5
DISTI # STP38N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP38N65M5)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$3.9900
  • 6000:$4.0900
  • 4000:$4.2900
  • 2000:$4.4900
  • 1000:$4.6900
STP38N65M5
DISTI # 45AC7721		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 45AC7721)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.7300
STP38N65M5
DISTI # 45AC7721		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes234
  • 1:$2.9700
  • 10:$2.9700
  • 25:$2.9700
  • 50:$2.9700
  • 100:$2.9700
  • 250:$2.9700
  • 500:$2.9700
STP38N65M5
DISTI # 511-STP38N65M5		STMicroelectronicsMOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
RoHS: Compliant		0
  • 1:$7.5800
  • 10:$6.8500
  • 25:$6.5300
  • 100:$5.6700
  • 250:$5.4200
  • 500:$4.9400
  • 1000:$4.3000
STP38N65M5STMicroelectronics 4000
    STP38N65M5
    DISTI # 7832974P    		STMicroelectronicsMOSFET N-CHANNEL 650V 30A TO-220, TU134
    • 200:£3.4800
    • 100:£3.7500
    • 50:£4.0200
    • 10:£4.3900
    STP38N65M5
    DISTI # 7832974    		STMicroelectronicsMOSFET N-CHANNEL 650V 30A TO-220, EA18
    • 200:£3.4800
    • 100:£3.7500
    • 50:£4.0200
    • 10:£4.3900
    • 1:£5.3600
    STP38N65M5
    DISTI # TMOSP12773    		STMicroelectronicsN-CH 650V 30A95mOhm TO220-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$2.5500
    STP38N65M5
    DISTI # 2807296    		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB208
    • 500:£3.8500
    • 250:£4.2100
    • 100:£4.4000
    • 10:£5.0800
    • 1:£6.4300
    STP38N65M5
    DISTI # 2807296    		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB
    RoHS: Compliant    		166
    • 1000:$3.6700
    • 500:$3.9400
    • 250:$4.4200
    • 100:$4.9200
    • 10:$5.5500
    • 1:$6.3700
    STP38N65M5
    DISTI # XSKDRABS0019630    		STMicroelectronicsPower Field-EffectTransistor,17AI(D),650V,0.19ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
    RoHS: Compliant    		250 in Stock0 on Order
    • 250:$3.0900
    • 200:$3.3100
    图片 型号 描述
    STP38N65M5

    Mfr.#: STP38N65M5

    OMO.#: OMO-STP38N65M5

    		 MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
    STP38N65M5 38N65M5

    Mfr.#: STP38N65M5 38N65M5

    OMO.#: OMO-STP38N65M5-38N65M5-1190

    		 全新原装
    STP381

    Mfr.#: STP381

    OMO.#: OMO-STP381-1190

    		 全新原装
    STP38N06,38N06

    Mfr.#: STP38N06,38N06

    OMO.#: OMO-STP38N06-38N06-1190

    		 全新原装
    STP38N65M5

    Mfr.#: STP38N65M5

    OMO.#: OMO-STP38N65M5-STMICROELECTRONICS

    		 MOSFET N-CH 650V 30A TO-220
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    STP38N65M5的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$7.58
    US$7.58
    10
    US$6.85
    US$68.50
    25
    US$6.53
    US$163.25
    100
    US$5.67
    US$567.00
    250
    US$5.42
    US$1 355.00
    500
    US$4.94
    US$2 470.00
    1000
    US$4.30
    US$4 300.00
    2000
    US$4.14
    US$8 280.00
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