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SIHB12N60E-GE3

SIHB12N60E-GE3
Mfr. #:
SIHB12N60E-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命周期:
制造商新产品。
数据表:
SIHB12N60E-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N60E-GE3 DatasheetSIHB12N60E-GE3 Datasheet (P4-P6)SIHB12N60E-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SIHB12N60E-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
12 A
Rds On - 漏源电阻：
380 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
29 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
147 W
配置：
单身的
频道模式：
增强
打包：
管子
系列：
E
品牌：
威世 / Siliconix
秋季时间：
19 ns
产品类别：
MOSFET
上升时间：
19 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
35 ns
典型的开启延迟时间：
14 ns
单位重量：
0.050717 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    TR

    Tanks

    2019-01-22
    A***v
    A***v
    RU

    Everything has come safe and sound

    2019-01-22
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK
***ure Electronics
MOSFET 600V 380MOHM@10V 12A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 600V, 12A, TO-263-3
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHB12N60E-GE3
DISTI # V36:1790_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9136
  • 500000:$0.9150
  • 100000:$0.9941
  • 10000:$1.1110
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # V99:2348_09219014		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK0
  • 1000000:$0.9821
  • 500000:$0.9833
  • 100000:$1.0390
  • 10000:$1.1180
  • 1000:$1.1300
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
Min Qty: 1
Container: Bulk		146In Stock
  • 5000:$0.8911
  • 2500:$0.9045
  • 1000:$0.9715
  • 500:$1.1725
  • 100:$1.4271
  • 10:$1.7760
  • 1:$1.9800
SIHB12N60E-GE3
DISTI # SIHB12N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8590
  • 6000:$0.8827
  • 4000:$0.9079
  • 2000:$0.9463
  • 1000:$0.9753
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.1800
SIHB12N60E-GE3
DISTI # 68W7031		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		322
  • 100:$1.0300
  • 250:$1.0300
  • 500:$1.0300
  • 25:$1.1200
  • 50:$1.1200
  • 1:$1.2200
  • 10:$1.2200
SIHB12N60E-GE3
DISTI # 68W7032		Vishay IntertechnologiesMOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes
RoHS: Compliant		0
  • 10000:$0.8380
  • 6000:$0.8710
  • 4000:$0.9050
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIHB12N60E-GE3
DISTI # 78-SIHB12N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		840
  • 1:$1.9800
  • 10:$1.7400
  • 100:$1.3700
  • 500:$1.1700
  • 1000:$0.9710
  • 2000:$0.9040
  • 5000:$0.8910
SIHB12N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB12N60E-GE3
    DISTI # 1451818    		Vishay IntertechnologiesIn a Tube of 50, SIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, TU
    Min Qty: 50
    Container: Tube    		0
    • 50:$0.6980
    SIHB12N60E-GE3
    DISTI # 7689300    		Vishay IntertechnologiesSIHB12N60E-GE3 N-Channel MOSFET, 12 A, 600 V E Series, 3-Pin D2PAK Vishay, EA
    Min Qty: 1
    Container: Bulk    		671
    • 1:$0.7150
    SIHB12N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		Europe - 900
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1165
      • 5000:£0.7190
      • 1000:£0.7450
      • 500:£0.9630
      • 250:£1.0300
      • 100:£1.1000
      • 10:£1.4300
      • 1:£1.9500
      SIHB12N60E-GE3
      DISTI # 2364071      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-263
      RoHS: Compliant      		1160
      • 5000:$1.3700
      • 2500:$1.4300
      • 1000:$1.5300
      • 500:$1.8500
      • 100:$2.2500
      • 10:$2.7900
      • 1:$3.1100
      图片 型号 描述
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP

      		 EEPROM 256K (32Kx8)
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB

      		 Switching Voltage Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      B82793S0513N201

      Mfr.#: B82793S0513N201

      OMO.#: OMO-B82793S0513N201-EPCOS

      		 Common Mode Filters / Chokes 51uH 800mA 30% 7.1x6mm SMD
      LMR14206XMK/NOPB

      Mfr.#: LMR14206XMK/NOPB

      OMO.#: OMO-LMR14206XMK-NOPB-TEXAS-INSTRUMENTS

      		 Voltage Regulators - Switching Regulators SIMPLE SWITCHER 42 Vin,0.6A SD Vltg Reg
      BAV99LT3G

      Mfr.#: BAV99LT3G

      OMO.#: OMO-BAV99LT3G-ON-SEMICONDUCTOR

      		 Diodes - General Purpose, Power, Switching 70V 215mA Dual
      12065C334KAT2A

      Mfr.#: 12065C334KAT2A

      OMO.#: OMO-12065C334KAT2A-AVX

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 50volts X7R 10%
      M24256-BWMN6TP

      Mfr.#: M24256-BWMN6TP

      OMO.#: OMO-M24256-BWMN6TP-STMICROELECTRONICS

      		 IC EEPROM 256K I2C 1MHZ 8SO
      可用性
      库存:
      500
      订购:
      2483
      输入数量:
      SIHB12N60E-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$2.08
      US$2.08
      10
      US$1.72
      US$17.20
      100
      US$1.34
      US$134.00
      500
      US$1.17
      US$585.00
      1000
      US$0.97
      US$971.00
      2000
      US$0.90
      US$1 808.00
      5000
      US$0.87
      US$4 355.00
      10000
      US$0.84
      US$8 370.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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