PartNumber | SIHB12N60E-GE3 | SIHB12N60ET1-GE3 | SIHB12N60E |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 600V | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 12 A | 12 A | - |
Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 29 nC | 29 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 147 W | 147 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | - | - |
Series | E | E | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Fall Time | 19 ns | 19 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 19 ns | 19 ns | - |
Factory Pack Quantity | 1000 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | 35 ns | - |
Typical Turn On Delay Time | 14 ns | 14 ns | - |
Unit Weight | 0.050717 oz | 0.077603 oz | - |
Height | - | 4.83 mm | - |
Length | - | 10.67 mm | - |
Width | - | 9.65 mm | - |