FGA30N65SMD

Mfr. #:: FGA30N65SMD
制造商:: ON Semiconductor
描述:: IGBT Transistors 650V 30A FS Planar Gen2 IGBT
生命周期:: 制造商新产品。
数据表:: FGA30N65SMD 数据表
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ECAD Model:
更多信息:: FGA30N65SMD 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 0.225789 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 300W

反向恢复时间trr: 35ns

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 650V

IGBT型: 现场停止

电流收集器脉冲Icm: 90A

Vce-on-Max-Vge-Ic: 2.5V @ 15V, 30A

开关能源: 716μJ (on), 208μJ (off)

栅极电荷: 87nC

Td-on-off-25°C: 14ns/102ns

测试条件: 400V, 30A, 6 Ohm, 15V

钯功耗: 300 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 2.29 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 30 A

Tags: FGA30N6, FGA30N, FGA30, FGA3, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA30N65SMD 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

Market price

型号	制造商	描述	库存	价格
FGA30N65SMD DISTI # FGA30N65SMD-ND	ON Semiconductor	IGBT 650V 60A 300W TO3P-3 RoHS: Compliant Min Qty: 450 Container: Tube	Temporarily Out of Stock	450:$2.8353
FGA30N65SMD DISTI # FGA30N65SMD	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3P - Rail/Tube (Alt: FGA30N65SMD) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.7900 900:$1.7900 1800:$1.6900 2700:$1.6900 4500:$1.6900
FGA30N65SMD DISTI # FGA30N65SMD	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3P - Bulk (Alt: FGA30N65SMD) Min Qty: 162 Container: Bulk	Americas - 0	162:$1.9900 164:$1.9900 326:$1.8900 810:$1.8900 1620:$1.8900
FGA30N65SMD DISTI # 512-FGA30N65SMD	ON Semiconductor	IGBT Transistors FS2PIGBT TO3PN 30A 650V RoHS: Compliant	315	1:$3.6900 10:$3.1300 100:$2.7200 250:$2.5800 500:$2.3100 1000:$1.9500 2500:$1.8500
FGA30N65SMD	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	10800	1000:$2.0400 500:$2.1500 100:$2.2400 25:$2.3300 1:$2.5100
FGA30N65SMD DISTI # 8648770P	ON Semiconductor	IGBT 650V 30A FIELD STOP TO3PN, TU	412	20:£1.3100

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