STW65N80K5

Mfr. #:: STW65N80K5
制造商:: STMicroelectronics
描述:: MOSFET N-CH 800V 46A
生命周期:: 制造商新产品。
数据表:: STW65N80K5 数据表
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Tags: STW65N, STW65, STW6, STW

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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STW65N80K5 描述

***icroelectronics: N-channel 800 V, 0.07 Ohm typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package

***ow.cn: STW65N80K5 STMicroelectronics MOSFETs Transistor N-CH 800V 46A 3-Pin(3+Tab) TO-247 Tube - Arrow.com

***enic: 800V 46A 70m´Î@10V23A 446W 4V@100uA 3pF@100V N Channel 3.23nF@100V 92nC@10V -55¡Í~+150¡Í@(Tj) TO-247 MOSFETs ROHS

***icroelectronics: Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

***et: Trans MOSFET N-CH 600V 50A 3-Pin TO-247 Tube

***ark: Mosfet, Aec-Q101, N-Ch, 600V, 50A, 360W Rohs Compliant: Yes

***icroelectronics SCT: Automotive Power Discrete, 600V, 50A, TO-247, Tube

***el Electronic: IC REG LIN POS ADJ 100MA 8VSSOP

***Yang: MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET

***ow.cn: Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: N Channel 650 V 48 A 360 W 68 mOhm Surface Mount Power Mosfet - TO-247

***ark: Mosfet, N-Ch, 650V, 48A, To247; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes

***icroelectronics SCT: Automotive Power Discrete, 650V, 48A, TO-247, Tube

***el Electronic: IC FLASH 512M SPI 133MHZ 24BGA

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***el Electronic: Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD

***nell: MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ark: MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D

***ure Electronics: N-Channel 600 V 357 W 0.064 O 220 nC Flange Mount Power Mosfet-TO-247AC

***ical: Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC

*** Electronics: MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247

***nell: MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

*** Stop Electro: Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***icroelectronics: N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package

***r Electronics: Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Source Electronics: Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 42A TO-247

***ure Electronics: STW48N60M2 Series 650 V 0.07 Ohm 42 A N-Channel MDmesh M2 Power Mosfet-TO-247

***ark: MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 600V, 42A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

Market price

型号	制造商	描述	库存	价格
STW65N80K5 DISTI # V99:2348_17626272	STMicroelectronics	Trans MOSFET N-CH 800V 46A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	600	510:$8.5490 120:$9.7010 30:$11.0730 10:$11.5470 1:$12.5440
STW65N80K5 DISTI # 497-16333-5-ND	STMicroelectronics	MOSFET N-CH 800V 46A RoHS: Compliant Min Qty: 1 Container: Tube	551In Stock	510:$9.1350 120:$10.2690 30:$11.6550 10:$12.1590 1:$13.2300
STW65N80K5 DISTI # 31985409	STMicroelectronics	Trans MOSFET N-CH 800V 46A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	600	1:$12.5440
STW65N80K5 DISTI # STW65N80K5	STMicroelectronics	Trans MOSFET N-CH 800V 46A 3-Pin TO-247 Tube (Alt: STW65N80K5) RoHS: Compliant Min Qty: 600 Container: Tube	Asia - 600	30000:$8.7879 15000:$9.0625 6000:$9.3548 3000:$9.8305 1800:$10.3571 1200:$10.9434 600:$11.6000
STW65N80K5 DISTI # STW65N80K5	STMicroelectronics	Trans MOSFET N-CH 800V 46A 3-Pin TO-247 Tube (Alt: STW65N80K5) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€7.6900 500:€7.7900 100:€7.8900 50:€7.9900 25:€8.1900 10:€8.4900 1:€8.6900
STW65N80K5 DISTI # STW65N80K5	STMicroelectronics	Trans MOSFET N-CH 800V 46A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW65N80K5) RoHS: Not Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$7.6628 3600:$7.8227 2400:$8.1855 1200:$8.5714 600:$8.9955
STW65N80K5 DISTI # 79Y6065	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$7.5000
STW65N80K5. DISTI # 24AC0057	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$7.5000
STW65N80K5 DISTI # 511-STW65N80K5	STMicroelectronics	MOSFET N-channel 800 V, 0.07 Ohm typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package RoHS: Compliant	533	1:$12.6000 10:$11.5900 25:$11.1100 100:$9.7800 250:$9.3000 500:$8.7000

图片	型号	描述
	Mfr.#: STW65N60DM6 OMO.#: OMO-STW65N60DM6	MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package
	Mfr.#: STW65N65DM2AG OMO.#: OMO-STW65N65DM2AG	MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
	Mfr.#: STW6553A OMO.#: OMO-STW6553A-1190	全新原装
	Mfr.#: STW65N65DM2AG OMO.#: OMO-STW65N65DM2AG-STMICROELECTRONICS	MOSFET N-CH 650V 60A
	Mfr.#: STW65N80K5 OMO.#: OMO-STW65N80K5-STMICROELECTRONICS	MOSFET N-CH 800V 46A

STW65N80K5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes