MJD253-1G

MJD253-1G
Mfr. #:
MJD253-1G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 4A 100V 12.5W PNP
生命周期:
制造商新产品。
数据表:
MJD253-1G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJD253-1G DatasheetMJD253-1G Datasheet (P4-P6)MJD253-1G Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
IPAK-3
晶体管极性:
PNP
配置:
单身的
集电极-发射极电压 VCEO 最大值:
100 V
集电极-基极电压 VCBO:
100 V
发射极基极电压 VEBO:
7 V
集电极-发射极饱和电压:
0.6 V
最大直流集电极电流:
4 A
增益带宽积 fT:
40 MHz
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
系列:
MJD253
高度:
2.38 mm
长度:
6.73 mm
打包:
管子
宽度:
6.22 mm
品牌:
安森美半导体
连续集电极电流:
4 A
DC 集电极/基极增益 hfe 最小值:
40
Pd - 功耗:
12.5 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
75
子类别:
晶体管
单位重量:
0.024727 oz
Tags
MJD25, MJD2, MJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
ON Semi MJD253-1G PNP Bipolar Transistor, 4 A, 100 V, 3-Pin IPAK | ON Semiconductor MJD253-1G
***r Electronics
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
4.0 A, 100 V PNP Bipolar Power Transistor
***ical
Trans GP BJT PNP 100V 4A Automotive 3-Pin(3+Tab) IPAK Tube
***ark
POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251
***emi
Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single
***ical
Trans GP BJT PNP 100V 4A 1000mW 3-Pin(3+Tab) TP Bag
***ark
TRANSISTOR, PNP, 100V, 4A, 20W, TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***-Wing Technology
Bulk Through Hole PNP 3 Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 130MHz
***r Electronics
Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251
***emi
Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single
***et
Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag
***r Electronics
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
6.0 A, 100 V PNP Bipolar Power Transistor
***p One Stop
Trans GP BJT PNP 100V 6A Automotive 3-Pin(3+Tab) IPAK Rail
***enic
100V 20W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~+150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transistor Ca
***ark
BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
型号 制造商 描述 库存 价格
MJD253-1G
DISTI # MJD253-1GOS-ND
ON SemiconductorTRANS PNP 100V 4A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
821In Stock
  • 5025:$0.2693
  • 2550:$0.2893
  • 525:$0.3990
  • 150:$0.5047
  • 75:$0.6184
  • 10:$0.6580
  • 1:$0.7500
MJD253-1G
DISTI # MJD253-1G
ON SemiconductorTrans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail (Alt: MJD253-1G)
RoHS: Compliant
Min Qty: 75
Europe - 1575
  • 750:€0.2399
  • 450:€0.2589
  • 300:€0.2799
  • 150:€0.3059
  • 75:€0.3739
MJD253-1G
DISTI # MJD253-1G
ON SemiconductorTrans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: MJD253-1G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk
Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
MJD253-1G
DISTI # 26K4441
ON SemiconductorPOWER TRANSISTOR, PNP, -100V, I-PAK,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:12.5W,DC Collector Current:-4A,DC Current Gain hFE:40hFE,No. of Pins:3Pins RoHS Compliant: Yes0
  • 10000:$0.2500
  • 2500:$0.2600
  • 1000:$0.3070
  • 500:$0.3450
  • 100:$0.3840
  • 10:$0.5950
  • 1:$0.7170
MJD253-1G
DISTI # 70466681
ON SemiconductorON Semi MJD253-1G PNP Bipolar Transistor,4 A,100 V,3-Pin IPAK
RoHS: Compliant
0
  • 40:$0.7300
  • 100:$0.7200
  • 200:$0.6800
  • 400:$0.6300
MJD253-1G
DISTI # 863-MJD253-1G
ON SemiconductorBipolar Transistors - BJT 4A 100V 12.5W PNP
RoHS: Compliant
664
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
MJD253-1GON SemiconductorPower Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
RoHS: Compliant
30158
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
MJD253-1G
DISTI # 8024543P
ON SemiconductorMJD253-1GBIP DPAK PNP 4A 100V SL F, TU330
  • 1000:£0.2550
  • 400:£0.2940
  • 100:£0.3330
MJD253-1GON Semiconductor*** FREE SHIPPING ORDERS OVER $100 *** 4 A, 100 V, PNP, Si, POWER TRANSISTOR363
  • 177:$0.2380
  • 40:$0.3400
  • 1:$0.6800
MJD253-1G
DISTI # 1705815
ON SemiconductorPOWER TRANSISTOR, PNP, -100V, I-PAK
RoHS: Compliant
496
  • 50000:$0.3610
  • 25000:$0.3670
  • 10000:$0.3820
  • 2500:$0.3950
  • 1000:$0.4680
  • 100:$0.5850
  • 10:$0.9060
  • 1:$1.1000
图片 型号 描述
SBCP56-16T1G

Mfr.#: SBCP56-16T1G

OMO.#: OMO-SBCP56-16T1G

Bipolar Transistors - BJT SBN SSP SOT223 NPN
MJD243G

Mfr.#: MJD243G

OMO.#: OMO-MJD243G

Bipolar Transistors - BJT 4A 100V 12.5W NPN
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148

Diodes - General Purpose, Power, Switching Small Signal Diode
LMR62014XMF/NOPB

Mfr.#: LMR62014XMF/NOPB

OMO.#: OMO-LMR62014XMF-NOPB

Switching Voltage Regulators SIMPLE SWITCHER 20V out,1.4A SU Vltg Reg
HRG3216P-3000-B-T1

Mfr.#: HRG3216P-3000-B-T1

OMO.#: OMO-HRG3216P-3000-B-T1

Thin Film Resistors - SMD 1.0W 300 ohm 0.1% 1206 25ppm
RG1005P-102-B-T5

Mfr.#: RG1005P-102-B-T5

OMO.#: OMO-RG1005P-102-B-T5

Thin Film Resistors - SMD 1/16W 1K Ohms 0.1% 0402 25ppm
EEU-FS1C332

Mfr.#: EEU-FS1C332

OMO.#: OMO-EEU-FS1C332

Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 3300uF 10000H 12.5x25mm
MINISMDC050F-2

Mfr.#: MINISMDC050F-2

OMO.#: OMO-MINISMDC050F-2

Resettable Fuses - PPTC .50A 24V 100A Imax
SBCP56-16T1G

Mfr.#: SBCP56-16T1G

OMO.#: OMO-SBCP56-16T1G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT SBN SSP SOT223 NPN
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

DIODE GEN PURP 100V 200MA SOD80
可用性
库存:
664
订购:
2647
输入数量:
MJD253-1G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.71
US$0.71
10
US$0.59
US$5.89
100
US$0.38
US$38.00
1000
US$0.30
US$304.00
2500
US$0.26
US$642.50
10000
US$0.25
US$2 480.00
25000
US$0.24
US$5 950.00
50000
US$0.23
US$11 700.00
从...开始
Top