 |  | | |
| PartNumber | MJD253-1G | MJD253 | MJD253G |
| Description | Bipolar Transistors - BJT 4A 100V 12.5W PNP | ||
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | IPAK-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Gain Bandwidth Product fT | 40 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD253 | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Packaging | Tube | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 4 A | - | - |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 12.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.024727 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| MJD253T4G | Bipolar Transistors - BJT 4A 100V 12.5W PNP | ||
| MJD253-1G | Bipolar Transistors - BJT 4A 100V 12.5W PNP | ||
| MJD253 | 全新原装 | ||
| MJD253G | 全新原装 | ||
| MJD253T4G-CUT TAPE | 全新原装 | ||
ON Semiconductor |
MJD253-001 | TRANS PNP 100V 4A IPAK | |
| MJD253T4 | TRANS PNP 100V 4A DPAK | ||
| MJD253-1G | Bipolar Transistors - BJT 4A 100V 12.5W PNP | ||
| MJD253T4G | Bipolar Transistors - BJT 4A 100V 12.5W PNP |