IPI60R165CP

Mfr. #:: IPI60R165CP
制造商:: Rochester Electronics, LLC
描述:: RF Bipolar Transistors MOSFET N-Ch 600V 21A I2PAK-3 CoolMOS CP
生命周期:: 制造商新产品。
数据表:: IPI60R165CP 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: CoolMOS CP

打包: 管子

部分别名: IPI60R165CPAKSA1 IPI60R165CPXKSA1 SP000680744

单位重量: 0.084199 oz

安装方式: 通孔

商品名: 酷摩

包装盒: I2PAK-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 192 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 5 ns

上升时间: 5 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 21 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 165 mOhms

晶体管极性: N通道

典型关断延迟时间: 50 ns

典型开启延迟时间: 12 ns

通道模式: 增强

Tags: IPI60R16, IPI60R1, IPI60R, IPI60, IPI6, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI60R165CP 描述

***et: Trans MOSFET N-CH 650V 21A 3-Pin TO-262 Tube

***ark: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:21A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-262; Power Dissipation Pd:192W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Market price

型号	制造商	描述	库存	价格
IPI60R165CPAKSA1 DISTI # IPI60R165CPAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 21A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$2.6846
IPI60R165CPXKSA1 DISTI # IPI60R165CPXKSA1-ND	Infineon Technologies AG	HIGH POWER_LEGACY RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$2.9262
IPI60R165CP DISTI # IPI60R165CP	Infineon Technologies AG	Trans MOSFET N-CH 600V 21A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R165CP) RoHS: Not Compliant Min Qty: 171 Container: Bulk	Americas - 0	1710:$1.7900 513:$1.8900 855:$1.8900 342:$1.9900 171:$2.0900
IPI60R165CP DISTI # SP000276736	Infineon Technologies AG	Trans MOSFET N-CH 600V 21A 3-Pin TO-262 Tube (Alt: SP000276736) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	100:€1.6900 500:€1.6900 1000:€1.6900 25:€1.7900 50:€1.7900 1:€1.8900 10:€1.8900
IPI60R165CPAKSA1 DISTI # IPI60R165CPAKSA1	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPI60R165CPAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0
IPI60R165CPXKSA1 DISTI # IPI60R165CPXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 21A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI60R165CPXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.9900 5000:$1.9900 2000:$2.0900 1000:$2.1900 500:$2.2900
IPI60R165CPXKSA1 DISTI # 726-IPI60R165CPXKSA1	Infineon Technologies AG	MOSFET N-Ch 650V 21A I2PAK-3 RoHS: Compliant	0
IPI60R165CP	Infineon Technologies AG	Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA RoHS: Compliant	21	1000:$1.9300 500:$2.0400 100:$2.1200 25:$2.2100 1:$2.3800

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