IPW50R299CP

Mfr. #:: IPW50R299CP
制造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
生命周期:: 制造商新产品。
数据表:: IPW50R299CP 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商

产品分类: FET - 单

系列: CoolMOS CP

打包: 管子

部分别名: IPW50R299CPFKSA1 IPW50R299CPXK SP000301163

单位重量: 1.340411 oz

安装方式: 通孔

商品名: 酷摩

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 104 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 14 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: 500 V

Rds-On-Drain-Source-Resistance: 299 mOhms

晶体管极性: N通道

典型关断延迟时间: 80 ns

典型开启延迟时间: 35 ns

通道模式: 增强

Tags: IPW50R29, IPW50R2, IPW50, IPW5, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW50R299CP 描述

***et: Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Market price

型号	制造商	描述	库存	价格
IPW50R299CPFKSA1 DISTI # IPW50R299CPFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 550V 12A TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW50R299CP	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	9838	1000:$1.2600 500:$1.3300 100:$1.3800 25:$1.4400 1:$1.5600
IPW50R299CPFKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	140	1000:$1.2600 500:$1.3300 100:$1.3800 25:$1.4400 1:$1.5600
IPW50R299CP DISTI # 726-IPW50R299CP	Infineon Technologies AG	MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP RoHS: Compliant	210	1:$2.7600 10:$2.3500 100:$2.0400
IPW50R299CPFKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0

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