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IRF7779L2TRPBF

IRF7779L2TRPBF
Mfr. #:
IRF7779L2TRPBF
制造商:
Infineon Technologies
描述:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
生命周期:
制造商新产品。
数据表:
IRF7779L2TRPBF 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
国际整流器
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
安装方式
贴片/贴片
商品名
直接场效应晶体管
包装盒
DirectFET-9
技术
硅
通道数
1 Channel
配置
单八路源六角漏极
晶体管型
1 N-Channel
钯功耗
125 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
12 ns
上升时间
19 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
67 A
Vds-漏-源-击穿电压
150 V
Rds-On-Drain-Source-Resistance
9 mOhms
晶体管极性
N通道
典型关断延迟时间
36 ns
典型开启延迟时间
16 ns
Qg-门电荷
11 nC
通道模式
增强
Tags
IRF777, IRF77, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®
***p One Stop Japan
Trans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:67A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Synchronous Rectification; Low Conduction Losses; High Cdv/dt Immunity | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
型号 制造商 描述 库存 价格
IRF7779L2TRPBF
DISTI # V72:2272_13890689		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R888
  • 500:$2.9539
  • 250:$3.4000
  • 100:$3.5860
  • 25:$4.1120
  • 10:$4.1380
  • 1:$4.5920
IRF7779L2TRPBF
DISTI # V36:1790_13890689		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R0
  • 4000000:$2.1480
  • 2000000:$2.1490
  • 400000:$2.2270
  • 40000:$2.3420
  • 4000:$2.3600
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 1
Container: Cut Tape (CT)		4163In Stock
  • 1000:$2.6664
  • 500:$3.1616
  • 100:$3.7139
  • 10:$4.5330
  • 1:$5.0500
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 1
Container: Digi-Reel®		4163In Stock
  • 1000:$2.6664
  • 500:$3.1616
  • 100:$3.7139
  • 10:$4.5330
  • 1:$5.0500
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V DIRECTFET L8
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$2.4593
IRF7779L2TRPBF
DISTI # 32924199		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R4000
  • 200:$4.1437
  • 100:$4.4242
  • 50:$5.1765
  • 10:$5.2657
  • 5:$5.8395
IRF7779L2TRPBF
DISTI # 33139776		Infineon Technologies AGTrans MOSFET N-CH Si 150V 67A 15-Pin Direct-FET L8 T/R888
  • 500:$2.9539
  • 250:$3.4000
  • 100:$3.5860
  • 25:$4.1120
  • 10:$4.1380
  • 3:$4.5920
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Cut TR (SOS) (Alt: IRF7779L2TRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2855
  • 68:$2.8017
  • 34:$2.8892
  • 17:$2.9824
  • 9:$3.0818
  • 5:$3.1881
  • 3:$3.3020
  • 1:$3.4243
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Tape and Reel (Alt: IRF7779L2TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 24000:$2.2900
  • 40000:$2.2900
  • 16000:$2.3900
  • 8000:$2.4900
  • 4000:$2.5900
IRF7779L2TRPBF
DISTI # IRF7779L2TRPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R - Bulk (Alt: IRF7779L2TRPBF)
Min Qty: 136
Container: Bulk		Americas - 0
  • 680:$2.2900
  • 1360:$2.2900
  • 408:$2.3900
  • 272:$2.4900
  • 136:$2.6900
IRF7779L2TRPBF
DISTI # SP001572314		Infineon Technologies AGTrans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R (Alt: SP001572314)
Min Qty: 4000
Container: Tape and Reel		Europe - 0
    IRF7779L2TRPBF.
    DISTI # 26AC0645    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:67A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:125W,No. of Pins:15Pins RoHS Compliant: Yes
    RoHS: Compliant    		0
    • 24000:$2.2900
    • 16000:$2.3900
    • 8000:$2.4900
    • 1:$2.5900
    IRF7779L2TRPBF
    DISTI # 70019646    		Infineon Technologies AGMOSFET,150V,67A,11 MOHM,97NC QG
    RoHS: Not Compliant    		0
    • 4000:$7.1500
    IRF7779L2TRPBF
    DISTI # 942-IRF7779L2TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    RoHS: Compliant    		3686
    • 1:$4.8900
    • 10:$4.1600
    • 100:$3.6000
    • 250:$3.4200
    • 500:$3.0700
    • 1000:$2.5800
    • 4000:$2.3600
    IRF7779L2TRPBFInternational RectifierDirectFet Power MOSFET
    RoHS: Compliant    		18907
    • 1000:$2.4400
    • 500:$2.5700
    • 100:$2.6700
    • 25:$2.7900
    • 1:$3.0000
    IRF7779L2TRPBF
    DISTI # 1300957    		Infineon Technologies AGIRF7779L2TRPBF N-Channel MOSFET, 67 A, 150 V DirectFET, HEXFET, 9 + Tab-Pin L8 Infineon, EA
    Min Qty: 1
    Container: Bulk    		1465
    • 1:$3.2610
    IRF7779L2TRPBF
    DISTI # 2579995    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		5110
    • 1000:$3.8900
    • 500:$4.6300
    • 250:$5.1500
    • 100:$5.4300
    • 10:$6.2700
    • 1:$7.3700
    IRF7779L2TRPBF
    DISTI # 2579995    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		5135
    • 1000:£1.9800
    • 500:£2.5300
    • 250:£2.8200
    • 100:£2.9600
    • 10:£3.4200
    • 1:£4.4800
    IRF7779L2TRPBF
    DISTI # 2579995RL    		Infineon Technologies AGMOSFET, N-CH, 150V, 67A, DIRECTFET L8
    RoHS: Compliant    		0
    • 1000:£1.9800
    • 500:£2.5300
    • 250:£2.8200
    • 100:£2.9600
    • 10:£3.4200
    • 1:£4.4800
    图片 型号 描述
    IRF7779L2TRPBF

    Mfr.#: IRF7779L2TRPBF

    OMO.#: OMO-IRF7779L2TRPBF

    		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    IRF7779L2TR1PBF

    Mfr.#: IRF7779L2TR1PBF

    OMO.#: OMO-IRF7779L2TR1PBF

    		 MOSFET 150V 67A 11mOhm 97nC Qg
    IRF7779L2TRPBF.

    Mfr.#: IRF7779L2TRPBF.

    OMO.#: OMO-IRF7779L2TRPBF--1190

    		 Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
    IRF7779L2TR1PBF

    Mfr.#: IRF7779L2TR1PBF

    OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
    IRF7779L2TRPBF

    Mfr.#: IRF7779L2TRPBF

    OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
    可用性
    库存:
    Available
    订购:
    1000
    输入数量:
    IRF7779L2TRPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.44
    US$3.44
    10
    US$3.26
    US$32.63
    100
    US$3.09
    US$309.15
    500
    US$2.92
    US$1 459.90
    1000
    US$2.75
    US$2 748.00
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