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BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-CH 60V 30A TDSON-8
生命周期:
制造商新产品。
数据表:
BSC016N06NSATMA1 数据表
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更多信息:
BSC016N06NSATMA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
优化MOS
打包
卷轴
部分别名
BSC016N06NS BSC016N06NSXT SP000924882
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TDSON-8
技术
硅
通道数
1 Channel
配置
单四漏三源
晶体管型
1 N-Channel
钯功耗
139 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
9 ns
上升时间
9 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
100 A
Vds-漏-源-击穿电压
60 V
VGS-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
1.6 mOhms
晶体管极性
N通道
典型关断延迟时间
35 ns
典型开启延迟时间
19 ns
Qg-门电荷
71 nC
正向跨导最小值
140 S / 70 S
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型号 制造商 描述 库存 价格
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327    		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    图片 型号 描述
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1

    		 MOSFET N-Ch 60V 100A DSON-8 OptiMOS
    BSC016N04LS G

    Mfr.#: BSC016N04LS G

    OMO.#: OMO-BSC016N04LS-G

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N04LSGATMA1

    Mfr.#: BSC016N04LSGATMA1

    OMO.#: OMO-BSC016N04LSGATMA1

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N03LSGXT/BKN

    Mfr.#: BSC016N03LSGXT/BKN

    OMO.#: OMO-BSC016N03LSGXT-BKN-1190

    		 INSTOCK
    BSC016N03LSGXT

    Mfr.#: BSC016N03LSGXT

    OMO.#: OMO-BSC016N03LSGXT-1190

    		 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
    BSC016N03MS

    Mfr.#: BSC016N03MS

    OMO.#: OMO-BSC016N03MS-1190

    		 Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
    BSC016N03MSG

    Mfr.#: BSC016N03MSG

    OMO.#: OMO-BSC016N03MSG-1190

    		 Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC016N03MSGXT

    Mfr.#: BSC016N03MSGXT

    OMO.#: OMO-BSC016N03MSGXT-1190

    		 全新原装
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 30A TDSON-8
    BSC016N06NSTATMA1

    Mfr.#: BSC016N06NSTATMA1

    OMO.#: OMO-BSC016N06NSTATMA1-INFINEON-TECHNOLOGIES

    		 DIFFERENTIATED MOSFETS
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    BSC016N06NSATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.07
    US$1.07
    10
    US$1.01
    US$10.13
    100
    US$0.96
    US$95.97
    500
    US$0.91
    US$453.20
    1000
    US$0.85
    US$853.10
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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