SI1922EDH-T1-GE3

Mfr. #:: SI1922EDH-T1-GE3
制造商:: Vishay
描述:: MOSFET 2N-CH 20V 1.3A SOT-363
生命周期:: 制造商新产品。
数据表:: SI1922EDH-T1-GE3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SI1922EDH-T1-GE3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 集成电路芯片

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI1988DH-T1-GE3

单位重量: 0.000265 oz

安装方式: 贴片/贴片

包装盒: 6-TSSOP, SC-88, SOT-363

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: SC-70-6 (SOT-363)

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 1.25W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 1.3A

Rds-On-Max-Id-Vgs: 198 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

栅极电荷-Qg-Vgs: 2.5nC @ 8V

钯功耗: 1.25 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 220 ns

上升时间: 80 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 1.3 A

Vds-漏-源-击穿电压: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 198 mOhms

晶体管极性: N通道

典型关断延迟时间: 480 ns

典型开启延迟时间: 43 ns

Qg-门电荷: 1.6 nC

Tags: SI1922EDH-T1, SI1922EDH-T, SI1922, SI192, SI19, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1922EDH-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SI1922EDH-T1-GE3 DISTI # V36:1790_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0	3000000:$0.1227 1500000:$0.1229 300000:$0.1315 30000:$0.1444 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # V72:2272_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	39000In Stock	75000:$0.1197 30000:$0.1210 15000:$0.1276 6000:$0.1370 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.1178 75000:$0.1198 30000:$0.1219 15000:$0.1263 9000:$0.1309 6000:$0.1360 3000:$0.1414
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1922EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0949 18000:$0.0979 12000:$0.0999 6000:$0.1049 3000:$0.1079
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1039 18000:€0.1109 12000:€0.1209 6000:€0.1399 3000:€0.2059
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65T1686) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.1540 500:$0.1990 250:$0.2210 100:$0.2420 50:$0.2840 25:$0.3250 1:$0.4300
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV RoHS Compliant: Yes	0	1000:$0.1560 500:$0.2010 250:$0.2230 100:$0.2440 50:$0.2860 25:$0.3280 1:$0.4340
SI1922EDH-T1-GE3 DISTI # 64T4056	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes	860	1000:$0.1840 500:$0.2290 250:$0.2510 100:$0.2720 50:$0.3140 25:$0.3560 1:$0.4620
SI1922EDH-T1-GE3. DISTI # 28AC2118	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1.25W RoHS Compliant: No	0	30000:$0.0980 18000:$0.1000 12000:$0.1030 6000:$0.1080 1:$0.1110
SI1922EDH-T1-GE3 DISTI # 70616150	Vishay Siliconix	SI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor,1.3 A,20 V,6-Pin SOT-363 RoHS: Compliant	0	300:$0.2700 600:$0.2320 1500:$0.2030 3000:$0.1830
SI1922EDH-T1-GE3 DISTI # 78-SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	14142	1:$0.4200 10:$0.3240 100:$0.2410 500:$0.1980 1000:$0.1530 3000:$0.1390 6000:$0.1300 9000:$0.1210 24000:$0.1150
SI1922EDH-T1-GE3 DISTI # 8123091P	Vishay Intertechnologies	TRANS MOSFET N-CH 20V 1.3A 6-PIN, RL	4550	3000:£0.1100 1500:£0.1150 600:£0.1440 300:£0.1820
SI1922EDH-T1-GE3 DISTI # TMOS2002	Vishay Intertechnologies	Dual N-CH 20V 1,3A/4,5V SOT363 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1821 6000:$0.1717 9000:$0.1612 12000:$0.1456 18000:$0.1404
SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	Americas - 24000
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	860	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714RL	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	0	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363	1755	500:£0.1540 250:£0.1700 100:£0.1860 25:£0.2730 5:£0.2850

图片	型号	描述
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3	MOSFET 20V Vds 8V Vgs SC70-6
	Mfr.#: SI1922EDH OMO.#: OMO-SI1922EDH-1190	全新原装
	Mfr.#: SI1922EDH-T OMO.#: OMO-SI1922EDH-T-1190	全新原装
	Mfr.#: SI1922EDH-T1-E3 OMO.#: OMO-SI1922EDH-T1-E3-1190	全新原装
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3-VISHAY	MOSFET 2N-CH 20V 1.3A SOT-363
	Mfr.#: SI1922EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1922EDH-T1-GE3-CUT-TAPE-1190	全新原装

SI1922EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes