SI9410BDY-T1-E3

Mfr. #:: SI9410BDY-T1-E3
制造商:: Vishay / Siliconix
描述:: MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
生命周期:: 制造商新产品。
数据表:: SI9410BDY-T1-E3 数据表
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HTML Datasheet:: SI9410BDY-T1-E3 Datasheet SI9410BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:

产品属性
属性值

制造商：: 威世

产品分类：: MOSFET

RoHS：: E

技术：: 硅

商品名：: 沟槽场效应晶体管

打包：: 卷轴

系列：: SI9

品牌：: 威世 / Siliconix

产品类别：: MOSFET

出厂包装数量：: 2500

子类别：: MOSFET

第 # 部分别名：: SI9410BDY-E3

单位重量：: 0.017870 oz

Tags: SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9410BDY-T1-E3 描述

***et Europe: Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***nell: MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm

Market price

型号	制造商	描述	库存
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI9410BDY-T1-E3 DISTI # 781-SI9410BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 8.1A 0.024Ohm RoHS: Compliant	0
SI9410BDY-T1 DISTI # 781-SI9410BDY	Vishay Intertechnologies	MOSFET 30V 8.1A 2.5W RoHS: Not compliant	0
SI9410BDY-T1-E3	Vishay Intertechnologies		1150
SI9410BDY-T1-E3	Vishay Intertechnologies		2066
SI9410BDY-T1-E3	Vishay Intertechnologies		2892
SI9410BDY-T1-E3	Vishay Siliconix		1728
SI9410BDYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2025

图片	型号	描述
	Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3	MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
	Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
	Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY	IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
	Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
	Mfr.#: SI9410B OMO.#: OMO-SI9410B-1190	全新原装
	Mfr.#: SI9410BDY OMO.#: OMO-SI9410BDY-1190	POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: SI9410BDY-T1 OMO.#: OMO-SI9410BDY-T1-1190	MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
	Mfr.#: SI9410BDY-T1-E3. OMO.#: OMO-SI9410BDY-T1-E3--1190	全新原装

SI9410BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes