SI9410BDY-T1-GE3

SI9410BDY-T1-GE3
Mfr. #:
SI9410BDY-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
生命周期:
制造商新产品。
数据表:
SI9410BDY-T1-GE3 数据表
交货:
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支付:
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HTML Datasheet:
SI9410BDY-T1-GE3 DatasheetSI9410BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI9
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
2500
子类别:
MOSFET
第 # 部分别名:
SI9410BDY-GE3
单位重量:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 6.2A 8SOIC
***ukat
N-Ch 30V 8,1A 2,5W 0,024R SO8
***ment14 APAC
MOSFET, N CH, 30V, 8.1A , SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
型号 制造商 描述 库存 价格
SI9410BDY-T1-GE3
DISTI # SI9410BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-GE3
    DISTI # 781-SI9410BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W 24mohm @ 10V
    RoHS: Compliant
    0
      图片 型号 描述
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
      SI9410BDY

      Mfr.#: SI9410BDY

      OMO.#: OMO-SI9410BDY-1190

      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
      SI9410BDY-T1

      Mfr.#: SI9410BDY-T1

      OMO.#: OMO-SI9410BDY-T1-1190

      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
      SI9410BDY-T1-E3.

      Mfr.#: SI9410BDY-T1-E3.

      OMO.#: OMO-SI9410BDY-T1-E3--1190

      全新原装
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      SI9410BDY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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