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STP40N60M2

STP40N60M2
Mfr. #:
STP40N60M2
制造商:
STMicroelectronics
描述:
MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
生命周期:
制造商新产品。
数据表:
STP40N60M2 数据表
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更多信息:
STP40N60M2 更多信息 STP40N60M2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
34 A
Rds On - 漏源电阻：
88 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
25 V
Qg - 门电荷：
57 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
250 W
配置：
单身的
打包：
管子
系列：
STP40N60M2
晶体管类型：
1 N-Channel
品牌：
意法半导体
秋季时间：
11 ns
产品类别：
MOSFET
上升时间：
13.5 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
96 ns
典型的开启延迟时间：
20.5 ns
单位重量：
0.011640 oz
Tags
STP40N6, STP40N, STP40, STP4, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
***ure Electronics
Single N-Channel 650 V 0.088 O 250 W Flange Mount Power Mosfet - TO-220-3
***ark
MOSFET, N-CH, 600V, 34A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 34A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
N-Channel 600 V 105 mOhm MDmesh™ II Power Mosfet - TO-220FP
***ponent Stockers USA
29 A 600 V 0.11 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 29A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220FP
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 29.0A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ure Electronics
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 37.9A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 37A 3-Pin TO-220 Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 37A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***enic
600V 37A 87m´Î@10V18.5A 357W 3.5V@250uA 13.9pF@380V N Channel 2.604nF@380V 88nC@10V -55¡Í~+150¡Í@(Tj) TO-220 MOSFETs ROHS
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 36A 3-Pin TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STP40N60M2
DISTI # V36:1790_06564733		STMicroelectronicsTrans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    STP40N60M2
    DISTI # 497-14222-5-ND    		STMicroelectronicsMOSFET N-CH 600V 34A TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		373In Stock
    • 1000:$5.5242
    • 500:$6.3426
    • 100:$7.5702
    • 50:$8.3886
    • 1:$10.2300
    STP40N60M2
    DISTI # STP40N60M2    		STMicroelectronicsTrans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube (Alt: STP40N60M2)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€3.5900
    • 10:€3.2900
    • 25:€3.1900
    • 50:€2.9900
    • 100:€2.8900
    • 500:€2.7900
    • 1000:€2.5900
    STP40N60M2
    DISTI # STP40N60M2    		STMicroelectronicsTrans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP40N60M2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$5.4900
    • 2000:$5.2900
    • 4000:$4.9900
    • 6000:$4.7900
    • 10000:$4.6900
    STP40N60M2
    DISTI # 45AC7723    		STMicroelectronicsTrans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube - Bulk (Alt: 45AC7723)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$8.8500
    • 10:$8.0000
    • 25:$7.6300
    • 50:$7.1300
    • 100:$6.3700
    • 250:$5.2000
    • 500:$4.8900
    STP40N60M2
    DISTI # 45AC7723    		STMicroelectronicsMOSFET, N-CH, 600V, 34A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes250
    • 500:$4.8300
    • 1:$5.0000
    • 10:$5.0000
    • 25:$5.0000
    • 50:$5.0000
    • 100:$5.0000
    • 250:$5.0000
    STP40N60M2
    DISTI # 511-STP40N60M2    		STMicroelectronicsMOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
    RoHS: Compliant    		0
    • 1:$8.8500
    • 10:$8.0000
    • 25:$7.6300
    • 100:$6.6300
    • 250:$6.3300
    • 500:$5.7700
    • 1000:$5.0300
    STP40N60M2
    DISTI # STP40N60M2    		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,22A,250W,TO220-325
    • 1:$11.5600
    • 3:$9.9500
    • 10:$7.9900
    • 50:$7.1800
    STP40N60M2
    DISTI # TMOSP11520    		STMicroelectronicsN-CH 600V 34A88mOhmTO220-3Stock DE - 0Stock HK - 0Stock US - 0
    • 50:$4.9400
    • 100:$4.6600
    • 150:$4.3800
    • 200:$3.9500
    • 300:$3.8200
    STP40N60M2
    DISTI # 2807298    		STMicroelectronicsMOSFET, N-CH, 600V, 34A, TO-220AB
    RoHS: Compliant    		0
    • 500:$9.4200
    • 100:$11.2500
    • 50:$12.4600
    • 1:$15.1900
    STP40N60M2
    DISTI # 2807298    		STMicroelectronicsMOSFET, N-CH, 600V, 34A, TO-220AB
    RoHS: Compliant    		0
    • 500:£4.4900
    • 250:£4.9300
    • 100:£5.1600
    • 10:£5.9400
    • 1:£7.4600
    STP40N60M2
    DISTI # XSKDRABV0050301    		STMicroelectronics 
    RoHS: Compliant    		750 in Stock0 on Order
    • 750:$5.0520
    • 150:$5.4120
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    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    STP40N60M2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$8.85
    US$8.85
    10
    US$8.00
    US$80.00
    25
    US$7.63
    US$190.75
    100
    US$6.63
    US$663.00
    250
    US$6.33
    US$1 582.50
    500
    US$5.77
    US$2 885.00
    1000
    US$5.03
    US$5 030.00
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