TH58BYG3S0HBAI6

TH58BYG3S0HBAI6
Mfr. #:
TH58BYG3S0HBAI6
制造商:
Toshiba Memory
描述:
NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
生命周期:
制造商新产品。
数据表:
TH58BYG3S0HBAI6 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
东芝
产品分类:
NAND闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
FBGA-67
内存大小:
8 Gbit
接口类型:
平行线
组织:
1 G x 8
计时类型:
同步
数据总线宽度:
8 bit
电源电压 - 最小值:
1.7 V
电源电压 - 最大值:
1.95 V
电源电流 - 最大值:
30 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
托盘
内存类型:
NAND
产品:
NAND闪存
速度:
25 ns
品牌:
东芝内存
湿气敏感:
是的
产品类别:
NAND闪存
出厂包装数量:
338
子类别:
内存和数据存储
Tags
TH58BYG3, TH58BY, TH58B, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Parallel 1.8V 8G-bit 1G x 8 67-Pin VFBGA
***et
8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
***i-Key
8GB SLC NAND 24NM BGA 6.5X8 1.8V
型号 制造商 描述 库存 价格
TH58BYG3S0HBAI6
DISTI # V99:2348_18843079
Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 8G-bit 1G x 8 67-Pin VFBGA147
  • 100:$5.8000
  • 50:$6.2310
  • 10:$6.4330
  • 1:$7.0270
TH58BYG3S0HBAI6
DISTI # TH58BYG3S0HBAI6-ND
Toshiba Semiconductor and Storage Products8GB SLC NAND 24NM BGA 6.5X8 1.8V
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$8.0750
TH58BYG3S0HBAI6
DISTI # TH58BYG3S0HBAI6
Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TH58BYG3S0HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 338:$7.3900
  • 676:$7.2900
  • 1352:$7.0900
  • 2028:$6.9900
  • 3380:$6.7900
TH58BYG3S0HBAI6
DISTI # 757-TH58BYG3S0HBAI6
Toshiba America Electronic ComponentsNAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant
310
  • 1:$11.8800
  • 10:$10.6900
  • 25:$9.7400
  • 100:$8.7900
  • 250:$8.0800
  • 500:$7.3700
  • 1000:$6.4200
图片 型号 描述
THGAMRT0T43BAIR

Mfr.#: THGAMRT0T43BAIR

OMO.#: OMO-THGAMRT0T43BAIR

eMMC 128GB eMMC 5.1 3D BiCS -25C to 85C
THGBMHT0C8LBAIG

Mfr.#: THGBMHT0C8LBAIG

OMO.#: OMO-THGBMHT0C8LBAIG

eMMC 128GB 15nm eMMC (EEPROM)
TH58NVG5S0FTA20

Mfr.#: TH58NVG5S0FTA20

OMO.#: OMO-TH58NVG5S0FTA20

NAND Flash 3.3V 32Gb 32nm SLC NAND (EEPROM)
TC58CYG0S3HRAIG

Mfr.#: TC58CYG0S3HRAIG

OMO.#: OMO-TC58CYG0S3HRAIG

NAND Flash 1.8V 1Gb 24nm Serial NAND
TC58BYG1S3HBAI6

Mfr.#: TC58BYG1S3HBAI6

OMO.#: OMO-TC58BYG1S3HBAI6

NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
TC58BVG0S3HBAI6

Mfr.#: TC58BVG0S3HBAI6

OMO.#: OMO-TC58BVG0S3HBAI6

NAND Flash 3.3V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58NVG1S3EBAI5

Mfr.#: TC58NVG1S3EBAI5

OMO.#: OMO-TC58NVG1S3EBAI5

NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM)
THGAF8G8T23BAIL

Mfr.#: THGAF8G8T23BAIL

OMO.#: OMO-THGAF8G8T23BAIL

Universal Flash Storage (UFS) 32GB 1166MB/s Gen 6 UFS 2.1
THGAF8T1T83BAIR

Mfr.#: THGAF8T1T83BAIR

OMO.#: OMO-THGAF8T1T83BAIR

Universal Flash Storage (UFS) 256GB 1166MB/s Gen 6 UFS 2.1
TC58CYG0S3HRAIG

Mfr.#: TC58CYG0S3HRAIG

OMO.#: OMO-TC58CYG0S3HRAIG-TOSHIBA-MEMORY-AMERICA

SLC NAND with SPI Interface
可用性
库存:
190
订购:
2173
输入数量:
TH58BYG3S0HBAI6的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$8.40
US$8.40
10
US$7.73
US$77.30
25
US$7.57
US$189.25
50
US$7.55
US$377.50
100
US$6.77
US$677.00
250
US$6.56
US$1 640.00
500
US$6.24
US$3 120.00
1000
US$6.02
US$6 020.00
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