 |  |  | |
| PartNumber | TH58BYG3S0HBAI6 | TH58BYG3S0HBAI4 | TH58BYG3S0HBAI6-ND |
| Description | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | NAND Flash | NAND Flash | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | FBGA-67 | TFBGA-63 | - |
| Memory Size | 8 Gbit | 8 Gbit | - |
| Interface Type | Parallel | Parallel | - |
| Organization | 1 G x 8 | 1 G x 8 | - |
| Timing Type | Synchronous | Synchronous | - |
| Data Bus Width | 8 bit | 8 bit | - |
| Supply Voltage Min | 1.7 V | 1.7 V | - |
| Supply Voltage Max | 1.95 V | 1.95 V | - |
| Supply Current Max | 30 mA | 30 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Packaging | Tray | Tray | - |
| Memory Type | NAND | NAND | - |
| Product | NAND Flash | - | - |
| Speed | 25 ns | - | - |
| Brand | Toshiba Memory | Toshiba Memory | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | NAND Flash | NAND Flash | - |
| Factory Pack Quantity | 338 | 210 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba Memory |
TH58BYG3S0HBAI6 | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | |
| TH58BYG3S0HBAI4 | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | ||
| TH58BYG3S0HBAI6 | 8GB SLC NAND 24NM BGA 6.5X8 1.8V Benand | ||
| TH58BYG3S0HBAI4 | 8GB SLC BENAND 24NM BGA 9X11 1.8 | ||
| TH58BYG3S0HBAI6-ND | 全新原装 |