TC58NYG1S3HBAI4

TC58NYG1S3HBAI4
Mfr. #:
TC58NYG1S3HBAI4
制造商:
Toshiba Memory
描述:
NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
生命周期:
制造商新产品。
数据表:
TC58NYG1S3HBAI4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
东芝
产品分类:
NAND闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
TFBGA-63
内存大小:
2 Gbit
接口类型:
平行线
组织:
256 M x 8
计时类型:
同步
数据总线宽度:
8 bit
电源电压 - 最小值:
1.7 V
电源电压 - 最大值:
1.95 V
电源电流 - 最大值:
30 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
托盘
内存类型:
NAND
产品:
NAND闪存
速度:
25 ns
建筑学:
块擦除
品牌:
东芝内存
最大时钟频率:
-
湿气敏感:
是的
产品类别:
NAND闪存
出厂包装数量:
210
子类别:
内存和数据存储
Tags
TC58NYG1S3HBAI4, TC58NYG1S3H, TC58NYG1S3, TC58NYG1, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ronik
NAND-Flash 256Mx8 1.8V BGA63
***i-Key
2GB NAND SLC 24NM BGA (EEPROM)
***et
2Gbit, generation: 24nm, VCC=1.7 to 1.95V
型号 制造商 描述 库存 价格
TC58NYG1S3HBAI4
DISTI # TC58NYG1S3HBAI4-ND
Toshiba Semiconductor and Storage Products2G NAND SLC 24NM BGA
RoHS: Compliant
Min Qty: 210
Container: Tray
Temporarily Out of Stock
  • 210:$3.8950
TC58NYG1S3HBAI4
DISTI # TC58NYG1S3HBAI4
Toshiba America Electronic Components2Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG1S3HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray
Americas - 0
  • 210:$2.8900
  • 420:$2.8900
  • 840:$2.7900
  • 1260:$2.7900
  • 2100:$2.6900
TC58NYG1S3HBAI4
DISTI # 757-TC58NYG1S3HBAI4
Toshiba America Electronic ComponentsNAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant
228
  • 1:$5.3200
  • 10:$4.2800
  • 100:$3.9000
  • 250:$3.5200
  • 500:$3.1600
  • 1000:$2.6600
  • 2500:$2.5300
图片 型号 描述
TC58NYG1S3EBAI5

Mfr.#: TC58NYG1S3EBAI5

OMO.#: OMO-TC58NYG1S3EBAI5

NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM)
TC58NYG1S8EBAI4

Mfr.#: TC58NYG1S8EBAI4

OMO.#: OMO-TC58NYG1S8EBAI4-1190

全新原装
TC58NYG1S8HBAI6/2GBIT

Mfr.#: TC58NYG1S8HBAI6/2GBIT

OMO.#: OMO-TC58NYG1S8HBAI6-2GBIT-1190

全新原装
TC58NYG2S0FBAI4

Mfr.#: TC58NYG2S0FBAI4

OMO.#: OMO-TC58NYG2S0FBAI4-1190

全新原装
TC58NYG2S3ETAIO

Mfr.#: TC58NYG2S3ETAIO

OMO.#: OMO-TC58NYG2S3ETAIO-1190

全新原装
TC58NYG2S0HBAI6

Mfr.#: TC58NYG2S0HBAI6

OMO.#: OMO-TC58NYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG1S3EBAI5

Mfr.#: TC58NYG1S3EBAI5

OMO.#: OMO-TC58NYG1S3EBAI5-1151

Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG0S3EBAI4JRH

Mfr.#: TC58NYG0S3EBAI4JRH

OMO.#: OMO-TC58NYG0S3EBAI4JRH-1190

全新原装
TC58NYG1S3HBAI4-ND

Mfr.#: TC58NYG1S3HBAI4-ND

OMO.#: OMO-TC58NYG1S3HBAI4-ND-1190

全新原装
可用性
库存:
228
订购:
2211
输入数量:
TC58NYG1S3HBAI4的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.52
US$3.52
10
US$3.19
US$31.90
25
US$3.12
US$78.00
50
US$3.11
US$155.50
100
US$2.79
US$279.00
250
US$2.78
US$695.00
500
US$2.67
US$1 335.00
1000
US$2.54
US$2 540.00
2500
US$2.42
US$6 050.00
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