 | |  | |
| PartNumber | TC58NYG1S3HBAI4 | TC58NYG1S3EBAI5 | TC58NYG1S3HBAI4-ND |
| Description | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | NAND Flash | NAND Flash | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TFBGA-63 | TFBGA-63 | - |
| Memory Size | 2 Gbit | 2 Gbit | - |
| Interface Type | Parallel | Parallel | - |
| Organization | 256 M x 8 | 256 M x 8 | - |
| Timing Type | Synchronous | Synchronous | - |
| Data Bus Width | 8 bit | 8 bit | - |
| Supply Voltage Min | 1.7 V | 1.7 V | - |
| Supply Voltage Max | 1.95 V | 1.95 V | - |
| Supply Current Max | 30 mA | 30 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Packaging | Tray | Tray | - |
| Memory Type | NAND | NAND | - |
| Product | NAND Flash | NAND Flash | - |
| Speed | 25 ns | 25 ns | - |
| Architecture | Block Erase | Block Erase | - |
| Brand | Toshiba Memory | Toshiba Memory | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | NAND Flash | NAND Flash | - |
| Factory Pack Quantity | 210 | 180 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NYG1S3HBAI6 | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | |
| TC58NYG1S3HBAI4 | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58NYG1S3EBAI5 | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG1S3HBAI4_TRAY | 全新原装 | ||
| TC58NYG1S8EBAI4 | 全新原装 | ||
| TC58NYG1S8HBAI6 | 全新原装 | ||
| TC58NYG1S8HBAI6/2GBIT | 全新原装 | ||
| TC58NYG1S8HBAI6JD2 | 全新原装 | ||
| TC58NYG1S3HBAI6 | EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | ||
| TC58NYG1S3HBAI4 | Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG1S3EBAI5 | Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM | ||
| TC58NYG1S3HBAI4-ND | 全新原装 | ||
| TC58NYG1S3HBAI6-ND | 全新原装 |