BSG0810ND

BSG0810ND
Mfr. #:
BSG0810ND
制造商:
INFINEON
描述:
生命周期:
制造商新产品。
数据表:
BSG0810ND 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
英飞凌
产品分类
FET - 阵列
系列
优化MOS
打包
卷带 (TR)
部分别名
BSG0810NDI SP001241674
包装盒
8-PowerTDFN
技术
工作温度
-55°C ~ 155°C (TJ)
安装型
表面贴装
供应商-设备-包
PG-TISON-8
FET型
2 N-Channel (Dual) Asymmetrical
最大功率
2.5W
漏源电压 Vdss
25V
输入电容-Ciss-Vds
*
FET-Feature
Logic Level Gate, 4.5V Drive
Current-Continuous-Drain-Id-25°C
19A, 39A
Rds-On-Max-Id-Vgs
3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
栅极电荷-Qg-Vgs
8.4nC @ 4.5V
Tags
BSG0810, BSG08, BSG0, BSG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1-ND
Infineon Technologies AGMOSFET 2N-CH 25V 19A/39A 8TISON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.1211
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0810NDIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.1289
  • 10000:$1.0879
  • 20000:$1.0489
  • 30000:$1.0139
  • 50000:$0.9959
BSG0810NDIATMA1
DISTI # BSG0810NDI
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R (Alt: BSG0810NDI)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
  • 5000:$1.1200
  • 10000:$1.0889
  • 15000:$1.0595
  • 25000:$1.0316
  • 50000:$1.0182
  • 125000:$1.0051
  • 250000:$0.9924
BSG0810NDIATMA1
DISTI # 726-BSG0810NDIATMA1
Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant
4695
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3800
  • 1000:$1.1400
  • 2500:$1.0600
  • 5000:$1.0200
图片 型号 描述
BSG0811ND

Mfr.#: BSG0811ND

OMO.#: OMO-BSG0811ND

MOSFET DIFFERENTIATED MOSFETS
BSG0813NDIATMA1

Mfr.#: BSG0813NDIATMA1

OMO.#: OMO-BSG0813NDIATMA1

MOSFET LV POWER MOS
BSG0073

Mfr.#: BSG0073

OMO.#: OMO-BSG0073-1190

全新原装
BSG0095

Mfr.#: BSG0095

OMO.#: OMO-BSG0095-1190

全新原装
BSG0810ND

Mfr.#: BSG0810ND

OMO.#: OMO-BSG0810ND-1190

全新原装
BSG0810NDI

Mfr.#: BSG0810NDI

OMO.#: OMO-BSG0810NDI-1190

全新原装
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 25V 19A/39A 8TISON
BSG0811ND

Mfr.#: BSG0811ND

OMO.#: OMO-BSG0811ND-1190

MOSFET DIFFERENTIATED MOSFETS
BSG0811NDI

Mfr.#: BSG0811NDI

OMO.#: OMO-BSG0811NDI-1190

全新原装
BSG0813NDIATMA1INFINEON-

Mfr.#: BSG0813NDIATMA1INFINEON-

OMO.#: OMO-BSG0813NDIATMA1INFINEON--1190

全新原装
可用性
库存:
Available
订购:
3500
输入数量:
BSG0810ND的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
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