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STGPL6NC60DI

STGPL6NC60DI
Mfr. #:
STGPL6NC60DI
制造商:
STMicroelectronics
描述:
IGBT Transistors 600 V - 6 A Hyper fast IGBT
生命周期:
制造商新产品。
数据表:
STGPL6NC60DI 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGPL6NC60DI 更多信息 STGPL6NC60DI Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220-3
安装方式：
通孔
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.9 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
14 A
Pd - 功耗：
56 W
系列：
STGPL6NC60DI
打包：
管子
品牌：
意法半导体
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
单位重量：
0.081130 oz
Tags
STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***icroelectronics
6 A, 600 V hyper fast IGBT with Ultrafast diode
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***SIT Distribution GmbH
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***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
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***r Electronics
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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***ineon SCT
Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***p One Stop
Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP™ - TO-220FP
***ineon SCT
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;
***nell
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
型号 制造商 描述 库存 价格
STGPL6NC60DI
DISTI # 497-10072-5-ND		STMicroelectronicsIGBT 600V 14A 56W TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.8633
STGPL6NC60DI
DISTI # STGPL6NC60DI		STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8499
  • 2000:$0.8099
  • 4000:$0.7729
  • 6000:$0.7389
  • 10000:$0.7239
STGPL6NC60DI
DISTI # STGPL6NC60DI		STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
    STGPL6NC60DI
    DISTI # 511-STGPL6NC60DI    		STMicroelectronicsIGBT Transistors 600 V - 6 A Hyper fast IGBT
    RoHS: Compliant    		0
    • 1:$1.6700
    • 10:$1.4200
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.8230
    图片 型号 描述
    FAN7382MX

    Mfr.#: FAN7382MX

    OMO.#: OMO-FAN7382MX

    		 Gate Drivers Half Bridge Gate Dvr
    NCP5106ADR2G

    Mfr.#: NCP5106ADR2G

    OMO.#: OMO-NCP5106ADR2G

    		 Gate Drivers HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
    IRS2103STRPBF

    Mfr.#: IRS2103STRPBF

    OMO.#: OMO-IRS2103STRPBF

    		 Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
    STGF10NC60KD

    Mfr.#: STGF10NC60KD

    OMO.#: OMO-STGF10NC60KD

    		 IGBT Transistors PowerMESH&#34 IGBT
    STGP10NC60KD

    Mfr.#: STGP10NC60KD

    OMO.#: OMO-STGP10NC60KD

    		 IGBT Transistors PowerMESH&#34 IGBT
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2

    		 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
    IRS2103STRPBF

    Mfr.#: IRS2103STRPBF

    OMO.#: OMO-IRS2103STRPBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns
    STGP10NC60KD

    Mfr.#: STGP10NC60KD

    OMO.#: OMO-STGP10NC60KD-STMICROELECTRONICS

    		 IGBT 600V 20A 65W TO220
    STGF10NC60KD

    Mfr.#: STGF10NC60KD

    OMO.#: OMO-STGF10NC60KD-STMICROELECTRONICS

    		 IGBT 600V 9A 25W TO220FP
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2-STMICROELECTRONICS

    		 N-CHANNEL 600 V, 0.26 OHM TYP.,
    可用性
    库存:
    996
    订购:
    2979
    输入数量:
    STGPL6NC60DI的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.66
    US$1.66
    10
    US$1.41
    US$14.10
    100
    US$1.13
    US$113.00
    500
    US$0.99
    US$496.50
    1000
    US$0.82
    US$823.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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