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STL100N6LF6

STL100N6LF6
Mfr. #:
STL100N6LF6
制造商:
STMicroelectronics
描述:
MOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS
生命周期:
制造商新产品。
数据表:
STL100N6LF6 数据表
交货:
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ECAD Model:
更多信息:
STL100N6LF6 更多信息 STL100N6LF6 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PowerFLAT-5x6-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
14 A
Rds On - 漏源电阻：
4.5 mOhms
Vgs th - 栅源阈值电压：
2.4 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
130 nC
Pd - 功耗：
80 W
配置：
单身的
打包：
卷轴
系列：
STL100N6LF6
晶体管类型：
1 N-Channel
品牌：
意法半导体
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
Tags
STL100, STL10, STL1, STL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 60 V, 0.0038 Ohm typ., 22 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package
***et Europe
N-channel 60V, 3.8mΩ typ., 22A, STripFET F6 Power MOSFET
*** Electronic Components
MOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS
***i-Key
MOSFET N CH 60V 100A PWRFLAT 5X6
***r Electronics
Power Field-Effect Transistor, 22A I(D), 60V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ronik
N-CH 60V 25A 4,4mOhm PFlat 5x6
***el Electronic
IC REG LIN 1.2V/1.5V 200MA 6SON
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS
***ure Electronics
Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:60V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity: N Channel; Continuous Drain Current Id: 114A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 96W; Transistor Case Style: DirectFET ME; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StrongIRFET, DirectFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free
***C
Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***ineon SCT
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
AUIRFS3306 N-channel MOSFET Transistor; 120 A; 160 A; 60 V; 3-Pin D2PAK
***p One Stop
Trans MOSFET N-CH 60V 160A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive
***el Electronic
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ure Electronics
N-Channel 60 V 3.5 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ
***Yang
Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:80A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
***icroelectronics
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package
***ark
Mosfet Transistor, N Channel, 60 A, 75 V, 3.5 Mohm, 10 V, 4 V
***ure Electronics
N-Channel 75 V 3.7 mO Surface Mount STripFET™ Power MosFet - D2PAK
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
STL100N6LF6
DISTI # 497-13273-1-ND		STMicroelectronicsMOSFET N CH 60V 100A PWRFLAT 5X6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3545In Stock
  • 1000:$2.0303
  • 500:$2.4074
  • 100:$2.9730
  • 10:$3.6260
  • 1:$4.0600
STL100N6LF6
DISTI # 497-13273-6-ND		STMicroelectronicsMOSFET N CH 60V 100A PWRFLAT 5X6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3545In Stock
  • 1000:$2.0303
  • 500:$2.4074
  • 100:$2.9730
  • 10:$3.6260
  • 1:$4.0600
STL100N6LF6
DISTI # 497-13273-2-ND		STMicroelectronicsMOSFET N CH 60V 100A PWRFLAT 5X6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$1.8726
STL100N6LF6
DISTI # 511-STL100N6LF6		STMicroelectronicsMOSFET N-Ch 60V 0.0038 Ohm 22A STripFET VI MOS
RoHS: Compliant		3202
  • 1:$3.5900
  • 10:$2.8800
  • 100:$2.5600
  • 250:$2.3700
  • 500:$2.1300
  • 1000:$1.7900
  • 3000:$1.7000
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可用性
库存:
Available
订购:
1986
输入数量:
STL100N6LF6的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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