IRFH5207TRPBF

Mfr. #:: IRFH5207TRPBF
制造商:: Infineon Technologies
描述:: MOSFET N-CH 75V 13A 8-PQFN
生命周期:: 制造商新产品。
数据表:: IRFH5207TRPBF 数据表
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HTML Datasheet:: IRFH5207TRPBF Datasheet IRFH5207TRPBF Datasheet (P4-P6)IRFH5207TRPBF Datasheet (P7-P9)
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产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 卷轴

安装方式: 贴片/贴片

包装盒: PQFN-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 3.6 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 7.1 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 71 A

Vds-漏-源-击穿电压: 75 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 9.6 mOhms

晶体管极性: N通道

典型关断延迟时间: 20 ns

典型开启延迟时间: 7.2 ns

Qg-门电荷: 40 nC

正向跨导最小值: 51 S

通道模式: 增强

Tags: IRFH5207, IRFH520, IRFH52, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5207TRPBF 描述

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ark: T&R / MOSFET, 40V, 85A, 3.3 mOhm, 65 nC Qg, PQFN56

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 40V 117A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 117 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.3 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 37 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 78

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***ernational Rectifier: -30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -11A, 14.6 MOHM, 25VGS, PQFN3X3

***ment14 APAC: MOSFET,P CH,DIODE,30V,11A,PQFN33; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Power Dissipation Pd:2.8W; Voltage Vgs Max:-25V

Market price

型号	制造商	描述	库存	价格
IRFH5207TRPBF DISTI # IRFH5207TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 75V 13A 8-PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFH5207TRPBF DISTI # 70019276	Infineon Technologies AG	MOSFET 75V,Gen 10.7,10.11 mOhm max,43.5 nC Qg RoHS: Compliant	0	4000:$0.7220 8000:$0.7080 20000:$0.6860
IRFH5207TRPBF DISTI # 942-IRFH5207TRPBF	Infineon Technologies AG	MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC RoHS: Compliant	0

图片	型号	描述
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF	MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC
	Mfr.#: IRFH5250DTR2PBF OMO.#: OMO-IRFH5250DTR2PBF	MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
	Mfr.#: IRFH5220TR2PBF OMO.#: OMO-IRFH5220TR2PBF	MOSFET MOSFT 200V 20A 100mOhm 20nC Qg
	Mfr.#: IRFH5250DTRPBF. OMO.#: OMO-IRFH5250DTRPBF--1190	TRENCH_MOSFETS , ROHS COMPLIANT: YES
	Mfr.#: IRFH5207TRPBF OMO.#: OMO-IRFH5207TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 75V 13A 8-PQFN
	Mfr.#: IRFH5210PBF OMO.#: OMO-IRFH5210PBF-1190	全新原装
	Mfr.#: IRFH5210TRPBF OMO.#: OMO-IRFH5210TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A 8-PQFN
	Mfr.#: IRFH5215TR2PBF OMO.#: OMO-IRFH5215TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 5.0A PQFN
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 45A PQFN
	Mfr.#: IRFH5215TRPBF OMO.#: OMO-IRFH5215TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC

IRFH5207TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes