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STGW8M120DF3

STGW8M120DF3
Mfr. #:
STGW8M120DF3
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
生命周期:
制造商新产品。
数据表:
STGW8M120DF3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGW8M120DF3 更多信息 STGW8M120DF3 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
1.85 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
16 A
Pd - 功耗：
167 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGW8M120DF3
打包：
管子
品牌：
意法半导体
栅极-发射极漏电流：
250 uA
产品类别：
IGBT晶体管
出厂包装数量：
600
子类别：
IGBT
单位重量：
0.211644 oz
Tags
STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1200V, 16A, TO-247-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
型号 制造商 描述 库存 价格
STGW8M120DF3
DISTI # V99:2348_18695401		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 1:$3.6047
STGW8M120DF3
DISTI # 497-17619-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$1.7500
  • 510:$2.1787
  • 120:$2.5594
  • 30:$2.9530
  • 10:$3.1240
  • 1:$3.4800
STGW8M120DF3
DISTI # 33130727		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 4:$3.6047
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 - Trays (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 1800:$1.4900
  • 3000:$1.4900
  • 6000:$1.4900
  • 600:$1.5900
  • 1200:$1.5900
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 30		Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€1.7900
STGW8M120DF3
DISTI # 38AC2424		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
  • 500:$2.0900
  • 250:$2.3300
  • 100:$2.4500
  • 50:$2.5800
  • 25:$2.7100
  • 10:$2.8400
  • 1:$3.3300
STGW8M120DF3
DISTI # 511-STGW8M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
RoHS: Compliant		600
  • 1:$3.3000
  • 10:$2.8100
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
STGW8M120DF3
DISTI # IGBT2611		STMicroelectronicsIGBT 1200V8A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$1.8600
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-3
RoHS: Compliant		0
  • 2520:$2.8000
  • 1020:$2.9400
  • 510:$3.4900
  • 120:$4.3100
  • 30:$4.7300
  • 1:$5.8800
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-30
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.7800
  • 10:£2.0500
  • 1:£2.7300
图片 型号 描述
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

 TRENCH GATE FIELD-STOP IGBT M SE
可用性
库存:
598
订购:
2581
输入数量:
STGW8M120DF3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.30
US$3.30
10
US$2.81
US$28.10
100
US$2.43
US$243.00
250
US$2.31
US$577.50
500
US$2.07
US$1 035.00
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