BSG0811NDATMA1

Mfr. #:: BSG0811NDATMA1
制造商:: Infineon Technologies
描述:: MOSFET 2N-CH 25V 19A/41A 8TISON
生命周期:: 制造商新产品。
数据表:: BSG0811NDATMA1 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: FET - 阵列

系列: 优化MOS

打包: 卷带 (TR)

部分别名: BSG0811ND SP001075902

包装盒: 8-PowerTDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

供应商-设备-包: PG-TISON-8

FET型: 2 N-Channel (Dual) Asymmetrical

最大功率: 2.5W

漏源电压 Vdss: 25V

输入电容-Ciss-Vds: 1100pF @ 12V

FET-Feature: Logic Level Gate, 4.5V Drive

Current-Continuous-Drain-Id-25°C: 19A, 41A

Rds-On-Max-Id-Vgs: 3 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2V @ 250μA

栅极电荷-Qg-Vgs: 8.4nC @ 4.5V

Tags: BSG0811, BSG08, BSG0, BSG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSG0811NDATMA1 描述

***ure Electronics: Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS Power Mosfet - TISON8-4

***et: Trans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R

***ical: Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R

***ponent Sense: FET BSG0811ND 25V 50A DUAL-NFET PG-TISON

*** Source Electronics: MOSFET 2N-CH 25V 19A/41A 8TISON

***ronik: Dual N-CH 25V 50A 3/0,8mOhm

***ark: Mosfet, Dual N-Ch, 25V, 50A, Tison; Transistor Polarity:dual N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 25V, 50A, TISON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:6.25W; Transistor Case Style:TISON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, DUAL N-CH, 25V, 50A, TISON; Biegunowość tranzystora:Podwójny kanał N; Prąd ciągły Id drenu:50A; Napięcie drenu / źródła Vds:25V; Rezystancja przewodzenia Rds(on):0.0024ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.6V; Straty mocy Pd:6.25W; Rodzaj obudowy tranzystora:TISON; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:OptiMOS 5 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator

Market price

型号	制造商	描述	库存	价格
BSG0811NDATMA1 DISTI # V72:2272_06383271	Infineon Technologies AG	Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R RoHS: Compliant	850	500:$1.1473 250:$1.2594 100:$1.3057 25:$1.5345 10:$1.5935 1:$1.8288
BSG0811NDATMA1 DISTI # BSG0811NDATMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 25V 19A/41A 8TISON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3820In Stock	1000:$1.1944 500:$1.4415 100:$1.8533 10:$2.3060 1:$2.5500
BSG0811NDATMA1 DISTI # BSG0811NDATMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 25V 19A/41A 8TISON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3820In Stock	1000:$1.1944 500:$1.4415 100:$1.8533 10:$2.3060 1:$2.5500
BSG0811NDATMA1 DISTI # BSG0811NDATMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 25V 19A/41A 8TISON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.0396
BSG0811NDATMA1 DISTI # 30670549	Infineon Technologies AG	Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R RoHS: Compliant	850	500:$1.1456 250:$1.2574 100:$1.3035 25:$1.5316 10:$1.5905 7:$1.8250
BSG0811NDATMA1 DISTI # BSG0811NDATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	5000:$1.0469 10000:$1.0089 20000:$0.9729 30000:$0.9399 50000:$0.9229
BSG0811NDATMA1 DISTI # BSG0811ND	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R (Alt: BSG0811ND) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSG0811NDATMA1 DISTI # 13AC8343	Infineon Technologies AG	MOSFET, DUAL N-CH, 25V, 50A, TISON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	4980	1:$2.1400 10:$1.8200 25:$1.7000 50:$1.5800 100:$1.4600 250:$1.3700 500:$1.2800 1000:$1.0600
BSG0811NDATMA1	Infineon Technologies AG	Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS Power Mosfet - TISON8-4 RoHS: Not Compliant	5000Reel	5000:$1.1200
BSG0811ND DISTI # 726-BSG0811ND	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	0	1:$2.1400 10:$1.8200 100:$1.4600 500:$1.2800 1000:$1.0600 2500:$0.9820 5000:$0.9460
BSG0811NDATMA1 DISTI # 726-BSG0811NDATMA1	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$2.1400 10:$1.8200 100:$1.4600 500:$1.2800 1000:$1.0600 2500:$0.9820
BSG0811NDATMA1 DISTI # C1S322000639157	Infineon Technologies AG	MOSFETs	850	250:$1.2574 100:$1.3035 25:$1.5316 10:$1.5905
BSG0811NDATMA1 DISTI # 2726090	Infineon Technologies AG	MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant	4980	5:£1.4900 25:£1.3800 100:£1.1000 250:£1.0400 500:£0.9700
BSG0811NDATMA1 DISTI # 2726090	Infineon Technologies AG	MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant	4980	1:$4.0700 10:$3.6800 100:$2.9600 500:$2.3000 1000:$1.9100

图片	型号	描述
	Mfr.#: BSG0811ND OMO.#: OMO-BSG0811ND	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSG0811NDATMA1 OMO.#: OMO-BSG0811NDATMA1	MOSFET LV POWER MOS
	Mfr.#: BSG0811ND OMO.#: OMO-BSG0811ND-1190	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSG0811ND(SP001075902) OMO.#: OMO-BSG0811ND-SP001075902--1190	全新原装
	Mfr.#: BSG0811NDATMA1 OMO.#: OMO-BSG0811NDATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 25V 19A/41A 8TISON
	Mfr.#: BSG0811NDI OMO.#: OMO-BSG0811NDI-1190	全新原装
	Mfr.#: BSG0811NDATMA1-CUT TAPE OMO.#: OMO-BSG0811NDATMA1-CUT-TAPE-1190	全新原装

BSG0811NDATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes