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| PartNumber | PD20010-E | PD20010S-E | PD2001 |
| Description | RF MOSFET Transistors POWER R.F. | RF MOSFET Transistors POWER R.F. | |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Technology | Si | Si | Si |
| Id Continuous Drain Current | 5 A | 5 A | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Gain | 11 dB | 11 dB | 11 dB |
| Output Power | 10 W | 10 W | 10 W |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerSO-10RF-Formed-4 | PowerSO-10RF-Straight-4 | - |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | - |
| Height | 3.5 mm | 3.5 mm | - |
| Length | 7.5 mm | 7.5 mm | - |
| Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
| Series | PD20010-E | PD20010-E | PD20010-E |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Width | 9.4 mm | 9.4 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Channel Mode | Enhancement | Enhancement | - |
| Moisture Sensitive | Yes | Yes | - |
| Pd Power Dissipation | 59 W | 59 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 400 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Unit Weight | 0.105822 oz | 0.105822 oz | - |
| Package Case | - | - | PowerSO-10RF (Formed Lead) |
| Pd Power Dissipation | - | - | 59 W |
| Vgs Gate Source Voltage | - | - | 15 V |
| Id Continuous Drain Current | - | - | 5 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |