 |  |  | |
| PartNumber | STB35N65DM2 | STB35N60DM2 | STB35N60DM2-CUT TAPE |
| Description | MOSFET N-channel 650 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package | MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-247-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
| Id Continuous Drain Current | 28 A | 28 A | - |
| Rds On Drain Source Resistance | 94 mOhms | 110 mOhms | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | DM2 | STB35N60DM2 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 54 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 210 W | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | MDmesh | - |
| Fall Time | - | 10.7 ns | - |
| Rise Time | - | 17 ns | - |
| Typical Turn Off Delay Time | - | 68 ns | - |
| Typical Turn On Delay Time | - | 21.2 ns | - |
| Unit Weight | - | 0.079014 oz | - |