 |  | | |
| PartNumber | 2N5550RLRP | 2N5550RLRA | 2N5550RLRAG |
| Description | Bipolar Transistors - BJT 600mA 160V NPN | TRANS NPN 140V 0.6A TO-92 | TRANS NPN 140V 0.6A TO-92 |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 140 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Packaging | Ammo Pack | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
2N5550RLRPG | Bipolar Transistors - BJT 600mA 160V NPN | |
| 2N5550RLRP | Bipolar Transistors - BJT 600mA 160V NPN | ||
| 2N5550RLRA | TRANS NPN 140V 0.6A TO-92 | ||
| 2N5550RLRAG | TRANS NPN 140V 0.6A TO-92 | ||
| 2N5550RLRP | TRANS NPN 140V 0.6A TO-92 | ||
| 2N5550RLRPG | TRANS NPN 140V 0.6A TO-92 | ||
| 2N5550RA | 全新原装 |