 | |  | |
| PartNumber | BBS3002-DL-1E | BBS3002-DL-E | BBS3002-DL |
| Description | MOSFET MOSFET PCH 4V DRIVE SERIES | MOSFET 128KB I2C SER EEPROM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 5.8 mOhms | 4.4 mOhms | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 280 nC | 280 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 90 W | 90 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | BBS3002 | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 820 ns | 820 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1000 ns | 1000 ns | - |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 800 ns | 800 ns | - |
| Typical Turn On Delay Time | 95 ns | 95 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Forward Transconductance Min | - | 54 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| BBS3002-DL-1E | MOSFET MOSFET PCH 4V DRIVE SERIES | ||
| BBS3002-DL | 全新原装 | ||
ON Semiconductor |
BBS3002-DL-E | MOSFET 128KB I2C SER EEPROM | |
| BBS3002-DL-E | MOSFET P-CH 60V 100A SMP-FD | ||
| BBS3002-DL-1E | MOSFET P-CH 60V 100A D2PAK |