PartNumber | BSC12DN20NS3 G | BSC12DN20NS3G | BSC12DN20NS3GATMA1 |
Description | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | MOSFET N-CH 200V 11.3A 8TDSON |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 11.3 A | 11.3 A | - |
Rds On Drain Source Resistance | 108 mOhms | 108 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 8.7 nC | 8.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 50 W | 50 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | BSC12DN20 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 6 S | 6 S | - |
Fall Time | 3 ns | 3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4 ns | 4 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 10 ns | 10 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Part # Aliases | BSC12DN20NS3GATMA1 BSC12DN2NS3GXT SP000781774 | BSC12DN20NS3GATMA1 SP000781774 | - |
Tradename | - | OptiMOS | - |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Infineon Technologies |
BSC160N15NS5ATMA1 | MOSFET MV POWER MOS | |
BSC160N10NS3GATMA1 | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
BSC150N03LD G | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
BSC150N03LDGATMA1 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
BSC190N12NS3 G | MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 | ||
BSC12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
BSC12DN20NS3G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
BSC130P03LS G | MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P | ||
BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
BSC155N06NDATMA1 | MOSFET TRENCH 40<-<100V | ||
BSC12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
BSC13DN30NSFDATMA1 | MOSFET N-CH 300V 16A 8TDSON | ||
BSC150N03LD G | Trans MOSFET N-CH 30V 8A 8-Pin TDSON T/R (Alt: BSC150N03LD G) | ||
BSC150N03LDGATMA1 | MOSFET 2N-CH 30V 8A 8TDSON | ||
BSC152N10NSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
BSC16DN25NS3GATMA1 | MOSFET N-CH 250V 10.9A 8TDSON | ||
BSC190N12NS3 G | Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G) | ||
BSC12DN20NS3GATMA1 | MOSFET N-CH 200V 11.3A 8TDSON | ||
BSC160N10NS3GATMA1 | MOSFET N-CH 100V 42A TDSON-8 | ||
BSC160N15NS5ATMA1 | MOSFET N-CH 150V 56A 8TDSON | ||
BSC130P03LSGAUMA1 | MOSFET P-CH 30V 22.5A TDSON-8 | ||
BSC159N10LSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
BSC130P03LS G | IGBT Transistors MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P | ||
BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
BSC12DN20NS3G | RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
Infineon Technologies |
BSC130P03LSGAUMA1 | MOSFET SMALL SIGNAL+P-CH | |
BSC12DN20NS3GXT | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) | ||
BSC123N10LSGATMA1 , TDZ7 | 全新原装 | ||
BSC130N03M | 全新原装 | ||
BSC130P03LSG | Trans MOSFET P-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC130P03LS G) | ||
BSC130P03LSGAUMA1 , TDZF | 全新原装 | ||
BSC150N03LD G 30V,20A, | 全新原装 | ||
BSC150N03LD G 30V20A | 全新原装 | ||
BSC150N03LDG PB-FREE | 全新原装 | ||
BSC152N10NSF G | MOSFET N-Ch 100V 9.4A TDSON-8 | ||
BSC159N10LSF | 全新原装 | ||
BSC159N10LSFG | 全新原装 | ||
BSC160N10NS3GATMA1 , TDZ | 全新原装 | ||
BSC16DN25NS3G | 全新原装 | ||
BSC16DN25NS3GCT-ND | 全新原装 | ||
BSC150N03LD | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
BSC152N10NSFG | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSC150N03LDG | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSC160N10NS | 全新原装 | ||
BSC160N10NS3G | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) | ||
BSC190N04LSG | 全新原装 |