PartNumber | BSC011N03LSTATMA1 | BSC011N03LSIXT | BSC011N03LSIATMA1 |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 1.1 mOhms | 900 uOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 72 nC | 90 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 96 W | 96 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 85 S | 80 S | - |
Fall Time | 6.2 ns | 6.2 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8.8 ns | 9.2 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 35 ns | - |
Typical Turn On Delay Time | 6.7 ns | 6.4 ns | - |
Part # Aliases | BSC011N03LST SP001657064 | BSC011N03LSIATMA1 SP000884574 | BSC011N03LSI BSC11N3LSIXT SP000884574 |
Tradename | - | OptiMOS | OptiMOS |
Height | - | 1.27 mm | 1.27 mm |
Length | - | 5.9 mm | 5.9 mm |
Width | - | 5.15 mm | 5.15 mm |
制造商 | 型号 | 描述 | RFQ |
---|---|---|---|
Infineon Technologies |
BSC012N06NSATMA1 | MOSFET | |
BSC014N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
BSC014N04LSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
BSC011N03LSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
BSC014N06NS | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | ||
BSC014NE2LSI | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
BSC014N04LSIATMA1 | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | ||
BSC014N04LSI | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | ||
BSC014NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
BSC014N04LSATMA1 | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | ||
BSC014N04LS | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | ||
BSC014NE2LSIATMA1 | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
BSC014N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | ||
BSC014N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
BSC014N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC014N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC011N03LSIXT | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | ||
BSC011N03LSIATMA1 | MOSFET N-CH 30V 37A TDSON-8 | ||
BSC014N03LS G | Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP | ||
BSC014N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
BSC014N03MS G | Trans MOSFET N-CH 30V 30A 8-Pin TDSON T/R (Alt: BSC014N03MS G) | ||
BSC014N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
BSC014N04LS | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | ||
BSC014N04LSI | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | ||
BSC014N06NS | Trans MOSFET N-CH 60V 30A | ||
BSC014NE2LSI | Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R (Alt: BSC014NE2LSI) | ||
BSC014NE2LSIATMA1 | MOSFET N-CH 25V 33A TDSON-8 | ||
BSC015NE2LS5IATMA1 | MOSFET N-CH 25V 33A TDSON-8 | ||
BSC014N04LSTATMA1 | DIFFERENTIATED MOSFETS | ||
BSC014N06NSATMA1 | MOSFET N-CH 60V 30A TDSON-8 | ||
BSC014N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
BSC012N06NSATMA1 | TRENCH 40<-<100V | ||
BSC014NE2LSIXT | Darlington Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
BSC014N04LSATMA1 | MOSFET N-CH 40V 32A TDSON-8 | ||
BSC011N03LSIXT | IGBT Transistors MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS | ||
BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC014N04LSIATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
Infineon Technologies |
BSC011N03LSIATMA1 | MOSFET LV POWER MOS | |
BSC014N03MSGATMA1 | MOSFET LV POWER MOS | ||
BSC011N03LSI BSC011N03LS | 全新原装 | ||
BSC014N03LS | 全新原装 | ||
BSC014N03LSG | MOSFET, N-CH, 30V, 100A, TDSON-8 | ||
BSC014N03LSGATMA1 , TDA1 | 全新原装 | ||
BSC014N03MS | 全新原装 | ||
BSC014N03MSGATMA1 , TDA1 | 全新原装 | ||
BSC016N03KSG | 全新原装 | ||
BSC014N03MSG | 全新原装 | ||
BSC016N03LS | 全新原装 | ||
BSC016N03LSG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |