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| PartNumber | BSC883N03MS | BSC883N03MSG | BSC883N03MS G |
| Description | Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 | |
| Manufacturer | FEELING | INFINEON | Infineon Technologies |
| Product Category | FETs - Single | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | - | BSC883N03 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSC883N03MSGATMA1 SP000507418 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TDSON-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 8 ns |
| Rise Time | - | - | 7.6 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 19 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| BSC883N03MS | 全新原装 | ||
| BSC883N03MS G | IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 | ||
| BSC883N03MSG | Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSC883N03MSGATMA1 | MOSFET N-CH 34V 19A TDSON-8 |