 |  | | |
| PartNumber | BSP603S2L | BSP603 | BSP603S22 |
| Description | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | ||
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 5.2 A | - | - |
| Rds On Drain Source Resistance | 33 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | Single Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 16 ns | 16 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | 28 ns | - |
| Typical Turn On Delay Time | 10.8 ns | 10.8 ns | - |
| Part # Aliases | BSP603S2LHUMA1 BSP63S2LXT SP000431792 | - | - |
| Unit Weight | 0.003951 oz | 0.008826 oz | - |
| Series | - | OptiMOS | - |
| Part Aliases | - | BSP603S2LHUMA1 BSP603S2LXT SP000431792 | - |
| Package Case | - | SOT-223-3 | - |
| Pd Power Dissipation | - | 1.8 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Rds On Drain Source Resistance | - | 33 mOhms | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | |
| BSP603S2LHUMA1 | MOSFET N-CH 55V 5.2A SOT-223 | ||
Infineon Technologies |
BSP603S2LHUMA1 | MOSFET N-CHANNEL_55/60V | |
| BSP603 | 全新原装 | ||
| BSP603S22 | 全新原装 | ||
| BSP603S2L .. | 全新原装 | ||
| BSP603S2L H6327 | 全新原装 | ||
| BSP603S2LGRN | 全新原装 | ||
| BSP603S2LNT | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |